PHOTODETECTOR, OPTICAL RECEIVING MODULE AND ELECTRONIC DEVICE

WIPO Patent Application WO/2024/093559

A1

A photodetector (7), an optical receiving module (23) and an electronic device. The photodetector (7) comprises a hybrid substrate of bulk silicon and silicon-on-insulator; a transistor is formed on a silicon-on-insulator substrate; a first photodiode and a second photodiode are formed on a bulk silicon substrate; the first photodiode comprises a first electrode doped region (703) and a first well region (702); a gate (712) serves as a first gate of the transistor; a semiconductor substrate (701) serves as a second gate of the transistor; the first electrode doped region (703) of the first photodiode is electrically connected to the gate (712) of the transistor; the semiconductor substrate (701) and the first well region (702) form a PN junction, such that the second photodiode is formed. Such configuration not only enhances the absorption of incident light to obtain the relatively high quantum efficiency and sensitivity, but also can improve the photoelectric responsivity, and reduce the leakage current and the parasitic capacitance, thereby reducing the power consumption.

JP2011198993	SEMICONDUCTOR DEVICE AND DC-DC CONVERTER
JP7245371	semiconductor equipment
JPS60124965	MANUFACTURE OF SEMICONDUCTOR DEVICE

WAN JING (CN)
ZHANG WEI (CN)
FENG BO (CN)
HUANG DONG (CN)

PCT/CN2023/120098

May 10, 2024

September 20, 2023

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HUAWEI TECH CO LTD (CN)

H01L27/06; H01L21/8234; H04B10/69

CN116598322A	2023-08-15
CN112510058A	2021-03-16
CN103460688A	2013-12-18
CN109728019A	2019-05-07
CN112382639A	2021-02-19
CN112397532A	2021-02-23
US20140284610A1	2014-09-25

BEIJING ZBSD PATENT & TRADEMARK AGENT LTD. (CN)

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