Title:
PHOTO-CURED HIGH-SOLID-PHASE SILICON NITRIDE CERAMIC, AND PREPARATION METHOD THEREFOR AND APPLICATION THEREOF
Document Type and Number:
WIPO Patent Application WO/2022/222448
Kind Code:
A1
Abstract:
A photo-cured high-solid-phase silicon nitride ceramic, and a preparation method therefor and an application thereof, relating to the technical field of ceramic materials. The preparation method comprises: placing a prepared base layer resin mixed solution in a 3D printer material tank, and printing a base layer model; placing configured high-solid-phase silicon nitride ceramic slurry in the 3D printing material tank, and printing a model ceramic layer under auxiliary leveling of a scraper; after the molding is finished, removing the cured base layer resin and ceramic layer from a printing platform by using a blade, and removing the base layer resin by using a ceramic degreasing process to obtain a final photo-cured ceramic biscuit. According to the printing method, the problem of a low forming success rate caused by high viscosity and photo-curing depth of high-solid-phase silicon nitride ceramic slurry can be effectively solved, moreover, the photo-cured high-solid-phase silicon nitride forming defect can be reduced, and the printing precision is improved.
Inventors:
WU SHANGHUA (CN)
SUN ZHENFEI (CN)
LV DONGLIN (CN)
OU JUN (CN)
HUANG SHENGWU (CN)
WANG BO (CN)
YANG PING (CN)
SUN ZHENFEI (CN)
LV DONGLIN (CN)
OU JUN (CN)
HUANG SHENGWU (CN)
WANG BO (CN)
YANG PING (CN)
Application Number:
PCT/CN2021/130652
Publication Date:
October 27, 2022
Filing Date:
November 15, 2021
Export Citation:
Assignee:
UNIV GUANGDONG TECHNOLOGY (CN)
International Classes:
C04B35/596; B28B1/00; B29C64/124; C04B35/622; C04B35/634
Foreign References:
CN113511901A | 2021-10-19 | |||
CN106810215A | 2017-06-09 | |||
CN107158474A | 2017-09-15 | |||
CN108675798A | 2018-10-19 | |||
CN106699191A | 2017-05-24 | |||
KR20190068652A | 2019-06-19 | |||
CN109133917A | 2019-01-04 |
Attorney, Agent or Firm:
SHENZHEN TALENT PATENT SERVICE (CN)
Download PDF: