Title:
PAGE BUFFER, MEMORY DEVICE, AND METHOD FOR PROGRAMMING THEREOF
Document Type and Number:
WIPO Patent Application WO/2023/173867
Kind Code:
A1
Abstract:
A page buffer includes a first charge/discharge circuit and a second charge/discharge circuit coupled to a bit line. The first charge/discharge circuit is configured to store first bit line forcing information and apply a first bit line forcing voltage to the bit line based on the first bit line forcing information. The second charge/discharge circuit coupled to the bit line and configured to store a second bit line forcing information, and apply a second bit line forcing voltage, different from the first bit line forcing voltage, to the bit line based on the second bit line forcing information. The first bit line forcing voltage and the second bit line forcing voltage are both higher than a programming bit line voltage and lower than a programming-inhabit bit line voltage.
Inventors:
DU ZHICHAO (CN)
WANG YAN (CN)
SONG DAESIK (CN)
WANG YU (CN)
WANG YAN (CN)
SONG DAESIK (CN)
WANG YU (CN)
Application Number:
PCT/CN2022/140559
Publication Date:
September 21, 2023
Filing Date:
December 21, 2022
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G11C7/12; G11C16/10
Foreign References:
| CN114783488A | 2022-07-22 | |||
| US20080158953A1 | 2008-07-03 | |||
| US20210295927A1 | 2021-09-23 | |||
| US20170117024A1 | 2017-04-27 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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