NONVOLATILE STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME

Title:

NONVOLATILE STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME

Document Type and Number:

WIPO Patent Application WO/2022/158149

Kind Code:

A1

Abstract:

Provided is a nonvolatile storage device that is capable of high performance. This nonvolatile storage device comprises a first electrode, a memory material layer, a second electrode, and a first buffer layer. The memory material layer includes a first element and is provided on the first electrode. The second electrode is provided on the memory material layer. The first buffer layer is provided between the memory material layer and the second electrode. The segregation of the first element in the first buffer layer is lower than the segregation of the first element in the second electrode.

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Inventors:

SUMINO JUN (JP)
ARATANI KATSUHISA (JP)
SONE TAKEYUKI (JP)
MIZUGUCHI TETSUYA (JP)

Application Number:

PCT/JP2021/044814

Publication Date:

July 28, 2022

Filing Date:

December 07, 2021

Export Citation:

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Assignee:

SONY SEMICONDUCTOR SOLUTIONS CORP (JP)

International Classes:

H01L27/105; H01L21/8239; H01L45/00; H01L49/00

Domestic Patent References:

WO2019198410A1	2019-10-17
WO2016158429A1	2016-10-06

Foreign References:

JP2019165084A

2019-09-26

Attorney, Agent or Firm:

TSUBASA PATENT PROFESSIONAL CORPORATION (JP)

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