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Title:
NITRIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/084905
Kind Code:
A1
Abstract:
This nitride semiconductor device (10) is provided with: a first nitride semiconductor layer (16); a second nitride semiconductor layer (18) which is formed on the first nitride semiconductor layer (16), and has a larger band gap than the first nitride semiconductor layer (16); and a gate electrode (32), a source electrode (24) and a drain electrode (26), which are formed above the second nitride semiconductor layer (18). The first nitride semiconductor layer (16) contains GaN. The half width of an X-ray rocking curve of the first nitride semiconductor layer (16) with respect to the (102) plane is 1,100 arcsec to 1,400 arcsec.

Inventors:
TAKADO SHINYA (JP)
OTAKE HIROTAKA (JP)
NAGASE KAZUYA (JP)
Application Number:
PCT/JP2023/034856
Publication Date:
April 25, 2024
Filing Date:
September 26, 2023
Export Citation:
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Assignee:
ROHM CO LTD (JP)
International Classes:
H01L29/778; H01L21/337; H01L21/338; H01L29/808; H01L29/812
Domestic Patent References:
WO2018180312A12018-10-04
WO2022113536A12022-06-02
Foreign References:
US20170170283A12017-06-15
JP2007096261A2007-04-12
JP2013004681A2013-01-07
JP2013145782A2013-07-25
Attorney, Agent or Firm:
ONDA Makoto et al. (JP)
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