Title:
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2024/092543
Kind Code:
A1
Abstract:
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a first etching stop layer, a gate electrode, and a gate isolation layer. The second nitride-based semiconductor layer is disposed on the first nitride-based semiconductor layer and has a bandgap greater than a bandgap of the first nitride-based semiconductor layer. The first etching stop layer is disposed over the second nitride-based semiconductor layer and has inner sidewalls facing each other. The gate electrode is disposed over the first etching stop layer. The gate isolation layer is disposed over the second nitride-based semiconductor layer and located between the first etching stop layer and the gate electrode. The gate isolation layer has first corners abutting against the inner sidewalls of the first etching stop layer.
Inventors:
HU KAI (CN)
WONG KING YUEN (CN)
WONG KING YUEN (CN)
Application Number:
PCT/CN2022/129174
Publication Date:
May 10, 2024
Filing Date:
November 02, 2022
Export Citation:
Assignee:
INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/778; H01L29/66
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (Tower B Ka Wah Building, No. 9 Shangdi 3rd Street, Haidian District, Beijing 5, CN)
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