Title:
NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
WIPO Patent Application WO/2024/092419
Kind Code:
A1
Abstract:
A nitride-based semiconductor device includes a first nitride-based semiconductor layer, a second nitride-based semiconductor layer, a source electrode, a drain electrode, a source field plate, a drain field plate, and a reduced surface field (RESURF) structure. The source electrode and the drain electrode are disposed above the second nitride-based semiconductor layer. The source field plate extends over and electrically coupled to the source electrode. The drain field plate extends over and electrically coupled to the drain electrode. The RESURF structure is disposed over the second nitride-based semiconductor layer and located between the source and drain field plates, in which the RESURF structure further includes a first doped nitride-based semiconductor layer making contact with the second nitride-based semiconductor layer and a first conductive layer disposed on the first doped nitride-based semiconductor layer and electrically coupled to the source field plate.
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Inventors:
HAO RONGHUI (CN)
Application Number:
PCT/CN2022/128677
Publication Date:
May 10, 2024
Filing Date:
October 31, 2022
Export Citation:
Assignee:
INNOSCIENCE ZHUHAI TECHNOLOGY CO LTD (CN)
International Classes:
H01L29/06; H01L29/40; H01L29/778
Foreign References:
| CN114080691A | 2022-02-22 | |||
| CN113675268A | 2021-11-19 | |||
| CN113875019A | 2021-12-31 | |||
| US20090072273A1 | 2009-03-19 |
Attorney, Agent or Firm:
BEIJING BESTIPR INTELLECTUAL PROPERTY LAW CORPORATION (CN)
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