NEURON DEVICE BASED ON MAGNETIC TUNNEL JUNCTION, AND NEURAL NETWORK APPARATUS - INST OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES

Title:

NEURON DEVICE BASED ON MAGNETIC TUNNEL JUNCTION, AND NEURAL NETWORK APPARATUS

Document Type and Number:

WIPO Patent Application WO/2023/197389

Kind Code:

A1

Abstract:

A neuron device (10) based on a magnetic tunnel junction, and a neural network apparatus. The neuron device (10) based on a magnetic tunnel junction comprises: a synthetic antiferromagnetic structure layer (111), wherein a bottom electrode is provided on a first side of the synthetic antiferromagnetic structure layer (111); a barrier layer (107), which is arranged on a second side of the synthetic antiferromagnetic structure layer (111); a ferromagnetic free layer (106), which is arranged on the side of the barrier layer (107) away from the bottom electrode; a top electrode (103), which is arranged on the side of the ferromagnetic free layer (106) away from the bottom electrode; and a first boundary antiferromagnetic pinning layer and a second boundary antiferromagnetic pinning layer, which are both arranged on the side of the ferromagnetic free layer (106) away from the bottom electrode, and are respectively located on two sides of the top electrode (103). In the neuron device (10), the strength of a generated stray field can be better controlled by means of adjusting the synthetic antiferromagnetic structure layer (111), such that a leakage speed is adjusted, and a high-reliability self-leakage function is ensured, thereby facilitating miniaturization and integration.

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Inventors:

XING GUOZHONG (CN)
WANG ZIWEI (CN)
ZHAO XUEFENG (CN)
WANG DI (CN)
LIU LONG (CN)
LIN HUAI (CN)
ZHANG HAO (CN)

Application Number:

PCT/CN2022/092117

Publication Date:

October 19, 2023

Filing Date:

May 11, 2022

Export Citation:

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Assignee:

INST OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES (CN)

International Classes:

G11C11/00

Foreign References:

CN113193110A	2021-07-30
CN112133343A	2020-12-25
CN107871815A	2018-04-03
CN113611794A	2021-11-05
CN109712655A	2019-05-03
US20110149649A1	2011-06-23

Other References:

YIRAN CHEN, ZHAO WEISHENG, SUN ZHENYU, ZHANG YAOJUN: "New non-volatile memory", MODERN PHYSICS, vol. 27, no. 1, 25 February 2015 (2015-02-25), pages 41 - 46, XP093099091, DOI: 10.13405/j.cnki.xdwz.2015.01.015

Attorney, Agent or Firm:

BEIJING BRIGHT & RIGHT LAW FIRM (CN)

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