Title:
METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE AND RESIST UNDERLAYER FILM-FORMING COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2023/068075
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide: a method for producing a semiconductor substrate, the method using a resist underlayer film-forming composition from which it is possible to form a resist underlayer film that has excellent solvent resistance and excellent resist pattern rectangularity; and a resist underlayer film-forming composition. The method for producing a semiconductor substrate comprises: a step for directly or indirectly applying a resist underlayer film-forming composition to a substrate; a step for applying a resist film-forming composition to a resist underlayer film that is formed in the step for applying the resist underlayer film-forming composition; a step for exposing, to radiation, a resist film that is formed in the step for applying the resist film-forming composition; and a step for developing at least the exposed resist film. The resist underlayer film-forming composition contains a polymer that has a partial structure represented by formula (i), and a solvent. (In formula (i), Y1 represents a divalent group selected from the group consisting of a sulfonyl group, a carbonyl group, and an alkanediyl group. Y2 represents a divalent group selected from the group consisting of a sulfonyl group, a carbonyl group, and a single bond. Note that in the case where Y1 represents an alkanediyl group, Y2 represents a sulfonyl group or a carbonyl group. In the case where Y2 represents a single bond, Y1 represents a sulfonyl group or a carbonyl group. R1 represents a monovalent organic group having 1-20 carbon atoms. X+ represents a monovalent onium cation.* represents a bond between the polymer and another structure.)
Inventors:
DOBASHI MASATO (JP)
KOMATSU HIROYUKI (JP)
YONEDA EIJI (JP)
DEI SATOSHI (JP)
EHARA KENGO (JP)
YOSHINAKA SHO (JP)
KATAGIRI TAKASHI (JP)
KOMATSU HIROYUKI (JP)
YONEDA EIJI (JP)
DEI SATOSHI (JP)
EHARA KENGO (JP)
YOSHINAKA SHO (JP)
KATAGIRI TAKASHI (JP)
Application Number:
PCT/JP2022/037579
Publication Date:
April 27, 2023
Filing Date:
October 07, 2022
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
G03F7/11; C08F12/30; G03F7/039
Domestic Patent References:
| WO2011018928A1 | 2011-02-17 |
Foreign References:
| JP2011164345A | 2011-08-25 | |||
| JP2013007892A | 2013-01-10 | |||
| JP2016047920A | 2016-04-07 | |||
| JP2013148787A | 2013-08-01 |
Attorney, Agent or Firm:
UNIUS PATENT ATTORNEYS OFFICE (JP)
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