Title:
METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, COMPOSITION, POLYMER AND METHOD FOR PRODUCING POLYMER
Document Type and Number:
WIPO Patent Application WO/2022/191062
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide: a method for producing a semiconductor substrate, the method using a composition which is capable of forming a film that exhibits excellent etching resistance, heat resistance and bending resistance; a composition; a polymer; and a method for producing a polymer. A method for producing a semiconductor substrate, the method comprising: a step in which a composition for forming a resist underlayer film is directly or indirectly applied to a substrate; a step in which a resist pattern is directly or indirectly formed on a resist under layer film that is formed in the application step; and a step in which etching is carried out using the resist pattern as a mask. With respect to this method for producing a semiconductor substrate, the composition for forming a resist underlayer film contains a solvent and a polymer which has a repeating unit represented by formula (1). (In formula (1), Ar1 represents a divalent group having an aromatic ring that has 10 to 40 ring members; and R0 represents a heteroaromatic ring that contains a sulfur atom as a ring-forming atom.)
Inventors:
NAKATSU HIROKI (JP)
YAMADA SHUHEI (JP)
ABE SHINYA (JP)
TSUJI TAKASHI (JP)
UEDA KANAKO (JP)
MIYAUCHI HIROYUKI (JP)
YAMADA SHUHEI (JP)
ABE SHINYA (JP)
TSUJI TAKASHI (JP)
UEDA KANAKO (JP)
MIYAUCHI HIROYUKI (JP)
Application Number:
PCT/JP2022/009373
Publication Date:
September 15, 2022
Filing Date:
March 04, 2022
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
C08G8/04; C08G12/26; G03F7/11; G03F7/20; G03F7/26
Foreign References:
| KR20190053546A | 2019-05-20 |
Attorney, Agent or Firm:
UNIUS PATENT ATTORNEYS OFFICE (JP)
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