Title:
METHOD FOR PRODUCING SEMICONDUCTOR ELEMENT HAVING SUPER JUNCTION STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2024/089963
Kind Code:
A1
Abstract:
The present invention provides a method for filling up a trench, which is formed in a silicon substrate and has a small opening width and a large aspect ratio, by means of high-rate epitaxial growth, while preventing closing of the opening. According to the present invention, a silicon substrate which is provided with a trench that has a high aspect ratio is subjected to selective epitaxial growth, while setting the growth temperature within the range of 950°C to 1050°C so that the trench opening is not closed, and a hydrogen chloride gas is added to a reaction gas, which uses a high-concentration silane chloride as a silicon source, in an amount according to the aspect ratio of the trench, thereby filling up the trench by epitaxial growth at a high growth rate within a range that does not cause closing.
Inventors:
TAKAMIZAWA SHOICHI (JP)
Application Number:
PCT/JP2023/027740
Publication Date:
May 02, 2024
Filing Date:
July 28, 2023
Export Citation:
Assignee:
TAKAMIZAWA SHOICHI (JP)
International Classes:
H01L29/78; H01L21/205; H01L21/336
Foreign References:
| JP2007096139A | 2007-04-12 | |||
| JP2009224606A | 2009-10-01 | |||
| JP2009231308A | 2009-10-08 | |||
| JP2012169391A | 2012-09-06 | |||
| JP2014112594A | 2014-06-19 | |||
| JP2019140258A | 2019-08-22 | |||
| US20130105796A1 | 2013-05-02 |
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