Title:
METHOD FOR PRODUCING SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/095458
Kind Code:
A1
Abstract:
A first selective growth mask (103) formed on a first semiconductor layer (102) has a frame shape provided with a rectangular first opening (103a) in a planar view. A region of the first opening (103a) is a region in which an element is formed. Two wide parts (104) which have a greater width than other regions are respectively provided at the central part of opposing sides of the rectangular shape of the first opening (103a) in a planar view. When a first region (131) is defined as the area between the two wide parts (104), and a second region (132) and a third region (133) are defined as the areas to the outer sides of the first region (131) in the first opening (103a), the second region (132) and the third region (133) are disposed so as to sandwich the first region (131) in a planar view.
Inventors:
YOSHIYA YUKI (JP)
NAKAJIMA FUMITO (JP)
HOSHI TAKUYA (JP)
SUGIYAMA HIROKI (JP)
NAKAJIMA FUMITO (JP)
HOSHI TAKUYA (JP)
SUGIYAMA HIROKI (JP)
Application Number:
PCT/JP2022/041186
Publication Date:
May 10, 2024
Filing Date:
November 04, 2022
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE (JP)
International Classes:
H01L21/338; H01L29/778; H01L29/812
Foreign References:
| JP2019033155A | 2019-02-28 | |||
| JP2001127043A | 2001-05-11 | |||
| JP2000164988A | 2000-06-16 | |||
| US20090309110A1 | 2009-12-17 |
Attorney, Agent or Firm:
YAMAKAWA, Shigeki et al. (JP)
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