Title:
METHOD FOR PREPARING TOP ELECTRODE OF MAGNETIC MEMORY, AND MAGNETIC STORAGE UNIT
Document Type and Number:
WIPO Patent Application WO/2024/016732
Kind Code:
A1
Abstract:
Provided in the present invention is a method for preparing a top electrode of a magnetic memory, the method comprising: providing a bottom structure, wherein the bottom structure has a patterned magnetic tunnel junction, and the top of the magnetic tunnel junction is covered with a hard metal mask; forming a side wall layer on side walls of the magnetic tunnel junction and the hard metal mask so as to form a first intermediate structure, wherein the side wall layer is a single-layer film layer or a stacked film layer; forming a backfill medium on the first intermediate structure, wherein the etch selectivity ratio of the backfill medium to the single-layer film layer or the stacked film layer is higher than a predetermined threshold; and forming a top metal interconnection structure on the backfill medium. By means of the method for preparing a top electrode of a magnetic memory provided in the present invention, a process window at the top of a magnetic tunnel junction can enlarge without increasing the heights of through holes in an array region and a logic region.
Inventors:
SHEN LIJIE (CN)
YU ZHIMENG (CN)
YU ZHIMENG (CN)
Application Number:
PCT/CN2023/086069
Publication Date:
January 25, 2024
Filing Date:
April 04, 2023
Export Citation:
Assignee:
ZHEJIANG HIKSTOR TECH CO LTD (CN)
International Classes:
G11C11/16
Foreign References:
| CN109994602A | 2019-07-09 | |||
| CN109087993A | 2018-12-25 | |||
| CN109087996A | 2018-12-25 | |||
| CN111933791A | 2020-11-13 | |||
| CN112531106A | 2021-03-19 | |||
| US20200235286A1 | 2020-07-23 |
Attorney, Agent or Firm:
BEIJING LTXT INTELLECTUAL PROPERTY LAW LLC (CN)
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