Title:
METHOD FOR FORMING SILICON OXIDE FILM
Document Type and Number:
WIPO Patent Application WO/2024/071205
Kind Code:
A1
Abstract:
Provided is a method for forming a silicon oxide film, the method including a preparation step for preparing a substrate within a reactor, a first introduction step for introducing at least one silicon compound expressed by formula (1) into the reactor, a first purging step for purging the reactor using a purge gas, a second introduction step for introducing an oxygen source into the reactor, and a second purging step for purging the reactor using the purge gas, the steps from the first introduction step to the second purging step being carried out at a temperature of 650°C to 800°C and a pressure of 7.6 Pa to 100 kPa. In formula (1): R1 is a methoxy group or an ethoxy group; R2 is a hydrogen atom, a methyl group, an ethyl group, a methoxy group, or an ethoxy group; R3 is a hydrogen atom, a methyl group, an ethyl group, a methoxy group, an ethoxy group, a group expressed by formula (2), or a group expressed by formula (3); and R4 is a group expressed by formula (2) or a group expressed by formula (3). In formulas (2) and (3), each of R5 to R10 independently is a hydrogen atom, a methyl group, or an ethyl group.
Inventors:
NAGATA KEISUKE (JP)
EBIHARA YOSUKE (JP)
HONDA HIROYUKI (JP)
EBIHARA YOSUKE (JP)
HONDA HIROYUKI (JP)
Application Number:
PCT/JP2023/035156
Publication Date:
April 04, 2024
Filing Date:
September 27, 2023
Export Citation:
Assignee:
AIR WATER INC (JP)
AIR WATER PERFORMANCE CHEMICAL INC (JP)
AIR WATER PERFORMANCE CHEMICAL INC (JP)
International Classes:
C23C16/18; C23C16/42; C23C16/455; H01L21/31; H01L21/316
Foreign References:
| JP2022504248A | 2022-01-13 | |||
| US20080286628A1 | 2008-11-20 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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