METHOD FOR FORMING IMPROVED INTERFACE AND THIN FILM BY USING HIGH-DENSITY RADICALS

Title:

METHOD FOR FORMING IMPROVED INTERFACE AND THIN FILM BY USING HIGH-DENSITY RADICALS

Document Type and Number:

WIPO Patent Application WO/2024/096231

Kind Code:

A1

Abstract:

According to one embodiment of the present invention, a method for forming an oxide film by using a deposition apparatus comprises the steps of: (a) depositing an insulating film on a silicon substrate; and (b) forming SiO2 between the silicon substrate and the insulating film by performing annealing with OH radicals on the insulating film using the deposition apparatus.

Inventors:

SHIN DONG HWA (KR)
KIM YONG WEON (KR)

Application Number:

PCT/KR2023/008427

Publication Date:

May 10, 2024

Filing Date:

June 19, 2023

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Assignee:

EQ TECH PLUS CO LTD (KR)

International Classes:

H01L21/28; H01L21/02

Foreign References:

KR20100136406A	2010-12-28
KR20090116476A	2009-11-11
KR20200060678A	2020-06-01
JP2008288227A	2008-11-27
KR20140084914A	2014-07-07

Attorney, Agent or Firm:

MAPS INTELLECTUAL PROPERTY LAW FIRM (KR)

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