Title:
METHOD FOR CLEANING SINGLE-SIDE-POLISHED LITHIUM NIOBATE WAFER
Document Type and Number:
WIPO Patent Application WO/2023/202192
Kind Code:
A1
Abstract:
Disclosed is a method for cleaning a single-side-polished lithium niobate wafer. The method comprises: soaking and cleaning a lithium niobate wafer with ammonium hydrogen fluoride; subjecting the wafer to ultrasonic cleaning using an organic solvent cleaning solution; rinsing the wafer with deionized water; scrubbing the wafer with a double-sided brush; and scrubbing the wafer with a single-sided brush to finally obtain a lithium niobate wafer having a low fragmentation rate and high cleanliness.
Inventors:
XU QIUFENG (CN)
CAO HUAN (CN)
SHEN HAO (CN)
ZHANG ZHONGWEI (CN)
QIAN YU (CN)
ZHANG WEIMING (CN)
PU SIQI (CN)
CAO HUAN (CN)
SHEN HAO (CN)
ZHANG ZHONGWEI (CN)
QIAN YU (CN)
ZHANG WEIMING (CN)
PU SIQI (CN)
Application Number:
PCT/CN2023/075803
Publication Date:
October 26, 2023
Filing Date:
February 14, 2023
Export Citation:
Assignee:
TDG HOLDING CO LTD (CN)
International Classes:
B08B1/00; B08B3/08; B08B1/04; B08B3/12; H01L21/67
Foreign References:
| CN114472341A | 2022-05-13 | |||
| CN109821810A | 2019-05-31 | |||
| CN103537453A | 2014-01-29 | |||
| CN110802052A | 2020-02-18 | |||
| CN111185432A | 2020-05-22 | |||
| FR2816527A1 | 2002-05-17 | |||
| US5996594A | 1999-12-07 | |||
| US6248180B1 | 2001-06-19 |
Attorney, Agent or Firm:
CHOFN INTELLECTUAL PROPERTY (CN)
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