Title:
METAL SUBSTRATES WITH STRUCTURES FORMED THEREIN AND METHODS OF MAKING SAME
Document Type and Number:
WIPO Patent Application WO/2024/076802
Kind Code:
A3
Abstract:
In-Substrate Structures (ISS) and isolation regions, including, but not limited to Through Metal Vias (TMV), Dielectric Isolation Vias (DIV), and Dielectric Isolation Pockets (DIP) formed in a metal substrate to provide enhanced operations for semiconductor packages incorporating a metal substrate, and methods of making the same.
Application Number:
PCT/US2023/071920
Publication Date:
May 10, 2024
Filing Date:
August 09, 2023
Export Citation:
Assignee:
LUX SEMICONDUCTORS INC (US)
International Classes:
H05K1/05; H05K3/42; H05K3/44; H01L23/528
Attorney, Agent or Firm:
STANZIONE, Patrick (US)
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