Title:
MEMORY REFRESH PARAMETER DETERMINATION METHOD AND APPARATUS, MEMORY REFRESH METHOD AND APPARATUS, AND MEDIUM AND DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/082343
Kind Code:
A1
Abstract:
A memory refresh parameter determination method, comprising: for each memory unit in a semiconductor to be tested, determining the time ratio of a data retention duration of the memory unit to a reference data retention duration of a reference memory unit, wherein the reference memory unit is a memory unit having the shortest data retention duration in said semiconductor (201); for each memory unit, determining a target refresh interval duration of the memory unit according to a reference refresh interval duration of the reference memory unit and the time ratio (202); and for each memory unit, determining, according to a reference refresh amount of the reference memory unit for memory data within the reference refresh interval duration and the time ratio, a target refresh amount of the memory unit within the target refresh interval duration (203). The method reduces the power consumption of a DRAM chip.
Inventors:
LU HUAN (CN)
Application Number:
PCT/CN2022/129356
Publication Date:
April 25, 2024
Filing Date:
November 02, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G11C11/406
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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