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Patent Searching and Data


Title:
MEMORY MANUFACTURING METHOD, AND MEMORY
Document Type and Number:
WIPO Patent Application WO/2022/247013
Kind Code:
A1
Abstract:
The present application relates to the technical field of storage devices. Provided are a memory manufacturing method, and a memory, which are used for solving the technical problems of a first polar plate being easily damaged, and the yield of a memory being low. The manufacturing method comprises: forming a stacked structure on a substrate, wherein the stacked structure comprises sacrificial layers and support layers, which are alternately arranged, a top layer of the stacked structure is a support layer, the support layer located between two sacrificial layers is provided with an intermediate hole, and intermediate holes are filled with sacrificial materials; forming a capacitor hole that penetrates through the stacked structure; forming first polar plates on a hole wall and a hole bottom of the capacitor hole; removing an area, which is opposite the intermediate holes, in the support layer of the top layer of the stacked structure, so as to form a capacitor opening hole from which the sacrificial layers are exposed; and removing all the sacrificial layers and all the sacrificial materials by means of the capacitor opening hole. Sacrificial layers and sacrificial materials can be removed by means of one-time etching without opening support layers one by one, thereby reducing the etching of the support layers after first polar plates are formed, reducing the possibility of damage to the first polar plates, and improving the yield of memories.

Inventors:
WAN QIANG (CN)
XIA JUN (CN)
ZHAN KANGSHU (CN)
LIU TAO (CN)
XU PENGHUI (CN)
LI SEN (CN)
Application Number:
PCT/CN2021/111438
Publication Date:
December 01, 2022
Filing Date:
August 09, 2021
Export Citation:
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Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/8242; H01L27/108; H01L49/02
Foreign References:
CN112563206A2021-03-26
US20180026040A12018-01-25
CN112397509A2021-02-23
Attorney, Agent or Firm:
LEADER PATENT & TRADEMARK FIRM (CN)
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