Title:
MEMORY DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/029186
Kind Code:
A1
Abstract:
In the present invention, data held in a volatile memory unit is enabled to be stored in a non-volatile memory part on the basis of voltage driving. This memory device comprises: a volatile memory unit for holding data in a complementary manner; and a voltage-controlled type magnetoresistance effect element for holding the data complementarily held in the volatile memory unit. The memory device may further comprise a variable resistance element which is connected between the volatile memory unit and the voltage-controlled type magnetoresistance effect element and capable of varying resistance between the volatile memory unit and the voltage-controlled type magnetoresistance effect element. The variable resistance element may vary the resistance in such a manner that substantially the same cell voltage is applied to the voltage-controlled type magnetoresistance effect element when the voltage-controlled type magnetoresistance effect element transitions from a high-resistance state to a low-resistance state and when the element transitions from the low-resistance state to the high-resistance state.
Inventors:
SAKAI LUI (JP)
HIRAGA KEIZO (JP)
HIGO YUTAKA (JP)
HOSOMI MASANORI (JP)
HIRAGA KEIZO (JP)
HIGO YUTAKA (JP)
HOSOMI MASANORI (JP)
Application Number:
PCT/JP2023/020838
Publication Date:
February 08, 2024
Filing Date:
June 05, 2023
Export Citation:
Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
G11C14/00
Foreign References:
| US20060181916A1 | 2006-08-17 | |||
| US20190326508A1 | 2019-10-24 |
Attorney, Agent or Firm:
MARUSHIMA, Toshikazu (JP)
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