Title:
MEMORY DEVICE, OPERATING METHOD THEREOF, SYSTEM, AND STORAGE MEDIUM
Document Type and Number:
WIPO Patent Application WO/2024/050689
Kind Code:
A1
Abstract:
A memory device, an operating method thereof, a system, and a non-transitory tangible storage medium are disclosed. The memory device includes a source line (SL), a bit line (BL), a memory string, a word line, a select line and a peripheral circuit. The memory string includes a memory cell and a select transistor including a storage layer. The word line is coupled to the memory cell. The select line is coupled to the select transistor. The peripheral circuit is coupled to the SL, the BL, the select line, and the word line. The peripheral circuit is configured to: apply a first voltage to the select line; and apply a second voltage to the SL and/or the BL, in which a first peak level of the first voltage is greater than a second peak level of second voltage.
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Inventors:
DONG ZHIPENG (CN)
CUI YING (CN)
XIANG LI (CN)
CUI YING (CN)
XIANG LI (CN)
Application Number:
PCT/CN2022/117280
Publication Date:
March 14, 2024
Filing Date:
September 06, 2022
Export Citation:
Assignee:
YANGTZE MEMORY TECH CO LTD (CN)
International Classes:
G11C16/20; G11C16/12; G11C16/34
Foreign References:
| US20170140829A1 | 2017-05-18 | |||
| CN112435704A | 2021-03-02 | |||
| CN114067890A | 2022-02-18 | |||
| CN103177762A | 2013-06-26 | |||
| US20140050025A1 | 2014-02-20 | |||
| US20140112072A1 | 2014-04-24 |
Attorney, Agent or Firm:
NTD UNIVATION INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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