MEMORY CHIP, MEMORY DEVICE AND ELECTRONIC DEVICE

WIPO Patent Application WO/2024/078102

A1

The present application relates to a memory chip, a memory device and an electronic device. The memory chip (20) comprises a plurality of memory units (210), each memory unit (210) comprising a substrate (21) and a plurality of memory sub-units (22), and the plurality of memory sub-units (22) being stacked on the substrate (21). Each memory sub-unit (22) comprises memory layers (220) and insulating layers (224), which are alternately stacked; and a first electrode (221) passing through the memory layers (220) and the insulating layers (224). Each memory layer (220) comprises a memory portion (223) for storing data and a second electrode (222). Each first electrode (221) is electrically connected to the memory portions (223) of all the memory layers (220) of the memory sub-units (22). The first electrodes (221) and the second electrodes (222) are used for connecting to a peripheral circuit, so as to control access of data in the memory portions by means of the peripheral circuit. The plurality of memory sub-units in the present application may be independent structures which can be independently manufactured, thereby lowing the difficulty of manufacturing memory chips.

WU QUANTAN (CN)
LI XIANG (CN)
CHEN YIFENG (CN)

PCT/CN2023/110919

April 18, 2024

August 03, 2023

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HUAWEI TECH CO LTD (CN)

G11C5/02

CN106256005A	2016-12-21
CN109196643A	2019-01-11
CN104701322A	2015-06-10
US20170345843A1	2017-11-30
US20140273373A1	2014-09-18
JP2014036034A	2014-02-24
CN111969106A	2020-11-20
CN113345489A	2021-09-03
CN112271254A	2021-01-26
CN103094302A	2013-05-08

SCIHEAD IP LAW FIRM (CN)

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