Title:
MANUFACTURING METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR STRUCTURE, AND SEMICONDUCTOR MEMORY
Document Type and Number:
WIPO Patent Application WO/2023/029395
Kind Code:
A1
Abstract:
Disclosed in embodiments of the present application are a manufacturing method for a semiconductor structure, a semiconductor structure, and a semiconductor memory. The manufacturing method comprises: providing a substrate; sequentially forming an MTJ structure and a first mask structure on the substrate; patterning the first mask structure to form a first pattern extending in a first direction; transferring the first pattern to the MTJ structure; forming a second mask structure above the MTJ structure; patterning the second mask structure to form a second pattern extending in a second direction; the first direction intersecting with the second direction, and the first direction being not perpendicular to the second direction; and patterning the MTJ structure using the second pattern to form a honeycomb MTJ array, wherein the first pattern and the second pattern form a honeycomb pattern. In this way, the cellular MTJ array has a high density, thus, the memory density of the semiconductor memory can be improved when the semiconductor memory is formed.
Inventors:
WANG XIAOGUANG (CN)
LI HUIHUI (CN)
ZENG DINGGUI (CN)
DENG JIEFANG (CN)
CAO KANYU (CN)
LI HUIHUI (CN)
ZENG DINGGUI (CN)
DENG JIEFANG (CN)
CAO KANYU (CN)
Application Number:
PCT/CN2022/077704
Publication Date:
March 09, 2023
Filing Date:
February 24, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
International Classes:
H01L43/12; H01L43/08
Foreign References:
| CN112563409A | 2021-03-26 | |||
| CN108931882A | 2018-12-04 | |||
| CN112309986A | 2021-02-02 | |||
| CN112514070A | 2021-03-16 | |||
| US20110076784A1 | 2011-03-31 | |||
| US20210083180A1 | 2021-03-18 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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