Title:
MAGNETIC RANDOM ACCESS MEMORY AND READ-WRITE METHOD THEREFOR, AND STORAGE APPARATUS
Document Type and Number:
WIPO Patent Application WO/2023/226235
Kind Code:
A1
Abstract:
Provided in the embodiments of the present disclosure are a magnetic random access memory and a read-write method therefor, and a storage apparatus. The magnetic random access memory comprises a storage array, a write circuit and a write detection circuit. The write circuit is electrically connected to the storage array, and is used for receiving external input data and applying, according to the external input data, a first voltage to a bit line corresponding to a selected word line and a second voltage to a source line corresponding to the selected word line. The write detection circuit is used for determining whether the output resistance of the write circuit changes, and sending, if the output resistance changes, a termination signal to the write circuit, such that the write circuit stops applying the first voltage and the second voltage. A write detection circuit is configured, whether a storage unit has completed data writing is determined by means of determining whether the output resistance of a write circuit changes, and if data writing has been completed, a write operation is stopped, such that energy consumption is reduced; and a write state is determined by means of detecting the change in the resistance, such that the accuracy of determination is high and the error is small.
Inventors:
DAI JIN (CN)
Application Number:
PCT/CN2022/117621
Publication Date:
November 30, 2023
Filing Date:
September 07, 2022
Export Citation:
Assignee:
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
International Classes:
G11C11/16
Foreign References:
| CN114388020A | 2022-04-22 | |||
| CN111462794A | 2020-07-28 | |||
| CN104599709A | 2015-05-06 | |||
| CN111383691A | 2020-07-07 | |||
| US10224087B1 | 2019-03-05 | |||
| US20180061466A1 | 2018-03-01 |
Attorney, Agent or Firm:
LIFANG & PARTNERS (CN)
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