Title:
MAGNETIC RANDOM ACCESS MEMORY AND APPARATUS
Document Type and Number:
WIPO Patent Application WO/2023/005970
Kind Code:
A1
Abstract:
Disclosed are a magnetic random access memory and an apparatus. The magnetic random access memory comprises: a seed layer (5) having a first crystal orientation; a spin orbit torque distribution layer (4) provided on the seed layer (5), a lattice structure of the spin orbit torque distribution layer (4) having a second crystal orientation under action of the seed layer (5), and when a spin orbit torque current is input to the spin orbit torque distribution layer (4), the spin orbit torque distribution layer (4) forming an out-of-plane damping-like torque; and a magnetic tunnel junction provided on the spin orbit torque distribution layer (4). The present invention can cause a spin orbit torque distribution layer (4) to have a spin orbit torque with an out-of-plane damping-like torque, and have relatively high current-spin current conversion efficiency (spin Hall angle), which can improve overturning efficiency, and an external magnetic field capable of preventing additional breaking of symmetry can be avoided when a perpendicular magnetic anisotropy magnetic torque is overturned.
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Inventors:
ZHAO WEISHENG (CN)
CAI WENLONG (CN)
CAI WENLONG (CN)
Application Number:
PCT/CN2022/108226
Publication Date:
February 02, 2023
Filing Date:
July 27, 2022
Export Citation:
Assignee:
UNIV BEIHANG (CN)
International Classes:
H01L43/06; H01L43/08; H01L43/10; H01L27/22
Foreign References:
| CN109427959A | 2019-03-05 | |||
| CN108011039A | 2018-05-08 | |||
| US20190304653A1 | 2019-10-03 | |||
| US20150129995A1 | 2015-05-14 | |||
| US20190006581A1 | 2019-01-03 |
Attorney, Agent or Firm:
BEIJING SANYOU INTELLECTUAL PROPERTY AGENCY LTD. (CN)
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