Title:
MAGNETIC DOMAIN WALL MOVING ELEMENT, MEMORY DEVICE, AND DATA WRITING METHOD
Document Type and Number:
WIPO Patent Application WO/2024/090370
Kind Code:
A1
Abstract:
According to the present disclosure, it is possible to achieve a magnetic domain wall moving element capable of improving a magnetic domain wall moving speed. A magnetic domain wall moving element according to one embodiment of the present disclosure comprises an antiferromagnetic layer that is made of an antiferromagnetic material having a non-collinear spin structure, and has a magnetic domain wall that moves in one direction by application of current.
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Inventors:
KONDOU KOUTA (JP)
OTANI YOSHICHIKA (JP)
WU MINGXING (JP)
OTANI YOSHICHIKA (JP)
WU MINGXING (JP)
Application Number:
PCT/JP2023/038152
Publication Date:
May 02, 2024
Filing Date:
October 23, 2023
Export Citation:
Assignee:
RIKEN (JP)
International Classes:
G11C11/16; H01L29/82; H10B61/00; H10N50/10
Domestic Patent References:
| WO2022158545A1 | 2022-07-28 | |||
| WO2017018391A1 | 2017-02-02 | |||
| WO2022224500A1 | 2022-10-27 |
Foreign References:
| CN114395791A | 2022-04-26 |
Other References:
HELENA REICHLOVA: "Imaging and writing magnetic domains in the non-collinear antiferromagnet Mn3Sn", NATURE COMMUNICATIONS, NATURE PUBLISHING GROUP, UK, vol. 10, no. 1, 29 November 2019 (2019-11-29), UK, pages 5459, XP093162253, ISSN: 2041-1723, DOI: 10.1038/s41467-019-13391-z
Attorney, Agent or Firm:
IEIRI Takeshi (JP)
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