Title:
LOCALIZED ANNEAL OF FERROELECTRIC DIELECTRIC
Document Type and Number:
WIPO Patent Application WO/2024/041048
Kind Code:
A1
Abstract:
A semiconductor device includes a ferroelectric random-access memory (FeRAM) cell. The FeRAM includes a ferroelectric dielectric that is annealed to attain its ferroelectric phase by an induced current flow and heating process. The current flow may be induced though a temporary wire that causes heating of the FeRAM cell. The resulting heating or anneal of the ferroelectric dielectric may crystalize the ferroelectric dielectric to embody or result in having ferroelectric properties. The induced current flow and heating process is substantially local to the FeRAM cell, and to ferroelectric dielectric therein, as opposed to a global heating or annealing process in which the entire semiconductor device, or a relatively larger region of semiconductor device, is heated to the requisite annealing temperature of ferroelectric dielectric.
Inventors:
GONG NANBO (US)
ANDO TAKASHI (US)
COHEN GUY M (US)
MIYAZOE HIROYUKI (US)
ANDO TAKASHI (US)
COHEN GUY M (US)
MIYAZOE HIROYUKI (US)
Application Number:
PCT/CN2023/094822
Publication Date:
February 29, 2024
Filing Date:
May 17, 2023
Export Citation:
Assignee:
IBM (US)
IBM CHINA CO LTD (CN)
IBM CHINA CO LTD (CN)
International Classes:
H10B51/00; G11C11/22; H10B53/00
Domestic Patent References:
| WO2004055880A1 | 2004-07-01 |
Foreign References:
| US20200411755A1 | 2020-12-31 | |||
| US20040113137A1 | 2004-06-17 | |||
| US20140063913A1 | 2014-03-06 | |||
| JP2006269611A | 2006-10-05 |
Attorney, Agent or Firm:
CCPIT PATENT AND TRADEMARK LAW OFFICE (CN)
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