Title:
HIGH-PRESSURE SUBSTRATE PROCESSING APPARATUS, AND PROCESSING GAS LINE USED THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/096660
Kind Code:
A1
Abstract:
The present invention provides a high-pressure substrate processing apparatus and a processing gas line used therefor. The high-pressure substrate processing apparatus comprises: an inner chamber having an inner housing formed to accommodate a substrate to be processed, and an inner door formed to be movable between a closed position for closing the inner housing and an open position for opening the inner housing; an outer chamber having an outer housing disposed to accommodate the inner chamber, and an outer door that can be moved to open and close the outer housing; and an air supply module having a processing gas line, which supplies processing gas for processing the substrate into the inner chamber at a first pressure higher than atmospheric pressure, and a protective gas line, which supplies a protective gas to a protective space between the outer chamber and the inner chamber at a second pressure set in relation to the first pressure. The processing gas line comprises: an introduction section having a discharge port disposed in the protective space; and a transfer section having a connection port which is connected to the discharge port in the closed position and moved apart from the discharge port in the open position, the transfer section being formed to transfer the processing gas, input from the introduction section, into the inner housing.
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Inventors:
LIM KUNYOUNG (KR)
Application Number:
PCT/KR2023/017487
Publication Date:
May 10, 2024
Filing Date:
November 03, 2023
Export Citation:
Assignee:
HPSP CO LTD (KR)
International Classes:
H01L21/67
Foreign References:
| JP2002280373A | 2002-09-27 | |||
| KR20150086831A | 2015-07-29 | |||
| KR20140127955A | 2014-11-05 | |||
| KR20050091697A | 2005-09-15 | |||
| KR20210086587A | 2021-07-08 |
Attorney, Agent or Firm:
JYK IP LAW FIRM (KR)
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