FILM UNDERFILL MATERIAL, RESIN COMPOSITION FOR FILM UNDERFILL MATERIAL, METHOD FOR MANUFACTURING SEMICONDUCTOR CHIP WITH RESIN COMPOSITION LAYER USING FILM UNDERFILL MATERIAL, METHOD FOR MANUFACTURING SUBSTRATE FOR MOUNTING SEMICONDUCTOR CHIP WITH RESIN COMPOSITION LAYER, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

Title:

Document Type and Number:

WIPO Patent Application WO/2023/063280

Kind Code:

A1

Abstract:

This film underfill material includes a resin composition layer including a thermosetting resin (A) and a visible light-absorbing agent (B), and a base film. The light transmittance of the film underfill material at a wavelength of 600 nm is 20-90%, and the difference between the light transmittance of the base film at a wavelength of 600 nm and the light transmittance of the film underfill material at a wavelength of 600 nm is 2-80%.

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Inventors:

SUGIYAMA GENKI (JP)
KAMEI TAKAYUKI (JP)
IHARA KATSUTOSHI (JP)
TAKANO KENTARO (JP)
KIDA TSUYOSHI (JP)

Application Number:

PCT/JP2022/037762

Publication Date:

April 20, 2023

Filing Date:

October 11, 2022

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Assignee:

MITSUBISHI GAS CHEMICAL CO (JP)

International Classes:

H01L21/60; B32B7/023; B32B27/20; C08K3/00; C08K5/00; C08L39/00; C08L93/04; C08L101/00; H01L23/29; H01L23/31

Domestic Patent References:

WO2020262585A1

2020-12-30

Foreign References:

JP2011140617A	2011-07-21
JP2011074246A	2011-04-14

Attorney, Agent or Firm:

INABA, Yoshiyuki et al. (JP)

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