Title:
FILM FORMATION METHOD AND FILM FORMATION DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/095785
Kind Code:
A1
Abstract:
Provided is a film formation method that involves repeating: a step for preparing a substrate inside a treatment vessel at a prescribed temperature; a step for generating a halogenated silicon starting material by reacting a silicon feedstock gas and a halogen feedstock gas, and forming a silicon adsorption layer by exposing the substrate to the generated halogenated silicon starting material; and a step for forming a silicon-containing film by supplying a reactive gas to cause a reaction between the reactive gas and the silicon adsorption layer. The silicon feedstock gas does not contain a halogen, and the halogen feedstock gas does not contain silicon.
Inventors:
LI JINWANG (JP)
Application Number:
PCT/JP2023/037845
Publication Date:
May 10, 2024
Filing Date:
October 19, 2023
Export Citation:
Assignee:
TOKYO ELECTRON LTD (JP)
International Classes:
C23C16/42; C23C16/455; H01L21/205; H01L21/31; H01L21/314; H01L21/318
Foreign References:
| JP2020120042A | 2020-08-06 | |||
| JP2020126885A | 2020-08-20 | |||
| JP2008527738A | 2008-07-24 | |||
| JP2013197507A | 2013-09-30 | |||
| US20190330736A1 | 2019-10-31 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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