FILM FORMATION METHOD AND FILM FORMATION DEVICE

Title:

FILM FORMATION METHOD AND FILM FORMATION DEVICE

Document Type and Number:

WIPO Patent Application WO/2024/090273

Kind Code:

A1

Abstract:

This film formation method comprises the following (A) to (D): (A) a substrate is prepared, which has, in different regions of the surface thereof, a first film and a second film formed from a different material than the first film; (B) an organic compound is used to form a self-assembled monolayer selectively on the surface of the second film with respect to the surface of the first film; (C) after step (B), a removing gas for removing the organic compound adhering to the surface of the first film is supplied to the surface of the substrate; and (D) after step (C), a target film is formed on the surface of the first film while suppressing the formation of the target film on the surface of the second film by using the self-assembled monolayer.

Inventors:

IKE SHINICHI (JP)
AZUMO SHUJI (JP)
KAWANO YUMIKO (JP)
NAKAGAWA TOMOHIRO (JP)
KASHIWAGI YUSAKU (JP)

Application Number:

PCT/JP2023/037417

Publication Date:

May 02, 2024

Filing Date:

October 16, 2023

Export Citation:

Click for automatic bibliography generation Help

Assignee:

TOKYO ELECTRON LTD (JP)

International Classes:

H01L21/316; C23C16/04; C23C16/455; H01L21/31

Domestic Patent References:

WO2020091016A1	2020-05-07
WO2014097829A1	2014-06-26
WO2020184284A1	2020-09-17

Foreign References:

JP2012033534A	2012-02-16
JP2021127508A	2021-09-02
JP2021108335A	2021-07-29
JP2021520640A	2021-08-19
JP2020158805A	2020-10-01
JP2021044534A	2021-03-18
JP2022055462A	2022-04-08
US20200402792A1	2020-12-24
US20210283650A1	2021-09-16