Title:
FABRICATION METHOD FOR SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2023/284049
Kind Code:
A1
Abstract:
The present disclosure provides a fabrication method for a semiconductor structure and a semiconductor structure. The fabrication method for a semiconductor structure comprises: providing an initial structure, the initial structure comprising a substrate, a laminated structure and a capacitor unit, and the laminated structure comprising a support layer; forming a first mask layer, the first mask layer covering the top surface of the laminated structure; forming a first opening in the first mask layer, the first opening exposing the top surface of the laminated structure, and a projection area of the first opening on the substrate at least partially overlapping with a projection area of the capacitor unit on the substrate; forming a shielding structure, the shielding structure being located in the first opening and covering a side wall of the first opening; removing part of the support layer according to a pattern defined by the shielding structure, the retained part of the support layer forming a support structure of the capacitor unit.
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Inventors:
BAEK KYOUNGYOON (CN)
Application Number:
PCT/CN2021/112189
Publication Date:
January 19, 2023
Filing Date:
August 12, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/8242; H01L27/108; H01L49/02
Foreign References:
| CN108183097A | 2018-06-19 | |||
| US20130250477A1 | 2013-09-26 | |||
| CN1655339A | 2005-08-17 | |||
| US20090257169A1 | 2009-10-15 | |||
| US20210202490A1 | 2021-07-01 | |||
| US20140065785A1 | 2014-03-06 |
Attorney, Agent or Firm:
BOXIN CHINA INTELLECTUAL PROPERTY (CN)
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