Title:
ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREFOR, AND CIRCUIT
Document Type and Number:
WIPO Patent Application WO/2024/083108
Kind Code:
A1
Abstract:
The present application provides an electronic device and a manufacturing method therefor. The electronic device comprises a substrate, a first nitride semiconductor layer, a second nitride semiconductor layer, a first conductive structure, a second conductive structure, a first port, and a second port. The first nitride semiconductor layer is on the substrate. The second nitride semiconductor layer is on the first nitride semiconductor layer, and a band gap of the second nitride semiconductor layer is greater than that of the first nitride semiconductor layer. The first conductive structure is on the second nitride semiconductor layer. The first port is on the second nitride semiconductor layer, and the second conductive structure is located between the first port and the first conductive structure. The second port is on the second nitride semiconductor layer, and the first port is located between the second port and the second conductive structure.
Inventors:
LIN YIMING (CN)
SHENG JIANJIAN (CN)
SHENG JIANJIAN (CN)
Application Number:
PCT/CN2023/124905
Publication Date:
April 25, 2024
Filing Date:
October 17, 2023
Export Citation:
Assignee:
INNOSCIENCE SUZHOU SEMICONDUCTOR CO LTD (CN)
International Classes:
H01L29/778; H03F1/30
Attorney, Agent or Firm:
CN-KNOWHOW INTELLECTUAL PROPERTY AGENT LIMITED (CN)
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