ELECTRON SOURCE AND METHOD FOR MANUFACTURING ELECTRON SOURCE

Title:

ELECTRON SOURCE AND METHOD FOR MANUFACTURING ELECTRON SOURCE

Document Type and Number:

WIPO Patent Application WO/2023/223640

Kind Code:

A1

Abstract:

This field-emission electron source is formed so as to define a curved surface, and comprises: an etching stop layer that has a first region that is supported by a substrate, and a second region that is not supported by the substrate; and an electron emission structure formed on at least the second region. Nothing needs to be formed or disposed at the portion below the second region. In the second region, the etch stop layer and the electron emission structure naturally define a convex surface or a concave surface. This focuses or scatters an electron beam.

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Inventors:

NAGAO MASAYOSHI (JP)
MURAKAMI KATSUHISA (JP)
MURATA HIROMASA (JP)

Application Number:

PCT/JP2023/008756

Publication Date:

November 23, 2023

Filing Date:

March 08, 2023

Export Citation:

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Assignee:

AIST (JP)

International Classes:

H01J37/073; H01J1/304; H01J9/02

Foreign References:

JP2007179874A	2007-07-12
JP2011077091A	2011-04-14
JPH0945231A	1997-02-14

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