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Patent Searching and Data


Title:
ELECTRON SOURCE CHIP AND PREPARATION METHOD THEREFOR, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/226995
Kind Code:
A1
Abstract:
Provided in the embodiments of the present application are an electron source chip and a preparation method therefor, and an electronic device. The electron source chip comprises a substrate, a first dielectric layer, a first electrode layer, an electron emitter and first protective layers, wherein the first dielectric layer is stacked on the substrate; the first electrode layer is stacked on the side of the first dielectric layer away from the substrate, and is provided with a first electron emitting chamber, which penetrates the first dielectric layer and the first electrode layer in a stacking direction to reach the substrate; the electron emitter is located in the first electron emitting chamber and stacked on the substrate; and the first protective layers are formed on an outer wall face of the electron emitter and an inner wall face of the first electron emitting chamber. According to the electron source chip provided in the embodiments of the present application, the stability and reliability of the electron source chip emitting electrons are improved, normal emission of the electrons is guaranteed; in addition, the service life of the electron source chip is prolonged.

Inventors:
XIAO XIANG (CN)
HE ZHENGYU (CN)
HUANG ZHIJUN (CN)
CHEN PINHAO (CN)
Application Number:
PCT/CN2023/095887
Publication Date:
November 30, 2023
Filing Date:
May 23, 2023
Export Citation:
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Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01J1/304
Foreign References:
CN114342035A2022-04-12
TW200713377A2007-04-01
CN1334582A2002-02-06
CN101743607A2010-06-16
CN1643639A2005-07-20
JPH08111167A1996-04-30
Attorney, Agent or Firm:
BEIJING ZBSD PATENT & TRADEMARK AGENT LTD. (CN)
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