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Title:
CONTROL METHOD FOR SIDEWALL CONTAMINATION OF MRAM MAGNETIC TUNNEL
Document Type and Number:
WIPO Patent Application WO/2023/029260
Kind Code:
A1
Abstract:
The present invention provides a control method for sidewall contamination of an MRAM magnetic tunnel. In the control method, there is no need to additionally coat an insulation protection layer on the sidewall of an MTJ layer, but a unique funnel-shaped trench is formed during the etching process; the funnel-shaped trench comprises a first area away from a plane where a substrate is located and a second area adjacent to the plane where the substrate is located; the size of the first area in a first direction gradually increases, and the size of the second area in the first direction does not change; and in removing metal contamination on the bottom of the funnel-shaped trench, the funnel-shaped trench can prevent the metal contamination from being attached to the sidewall of the MTJ layer, so as to improve the apparatus performance of an MRAM.

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Inventors:
YANG YUXIN (CN)
LI JIAHE (CN)
PENG TAIYAN (CN)
HU DONGDONG (CN)
XU KAIDONG (CN)
Application Number:
PCT/CN2021/134975
Publication Date:
March 09, 2023
Filing Date:
December 02, 2021
Export Citation:
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Assignee:
JIANGSU LEUVEN INSTR CO LTD (CN)
International Classes:
H01L43/12
Foreign References:
CN112635659A2021-04-09
CN111146335A2020-05-12
CN104518082A2015-04-15
US20150287911A12015-10-08
US20140138347A12014-05-22
CN202111006194A2021-08-30
Attorney, Agent or Firm:
UNITALEN ATTORNEYS AT LAW (CN)
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