COMPLEMENTARY PHOTOTRANSISTOR PIXEL UNIT, AND COMPLEMENTARY PHOTOTRANSISTOR SENSING AND COMPUTING ARRAY STRUCTURE AND OPERATING METHOD THEREFOR

WIPO Patent Application WO/2024/092406

A1

The present disclosure relates to a complementary phototransistor pixel unit, and a complementary phototransistor sensing and computing array structure and an operating method therefor. The complementary phototransistor pixel unit comprises: a first field-effect phototransistor, which is a field-effect phototransistor based on an ultra-thin body and a buried oxide layer; and a second field-effect phototransistor, which is a field-effect phototransistor based on an ultra-thin body and a buried oxide layer and is of a type different from the type of the first field-effect phototransistor, wherein the first field-effect phototransistor and the second field-effect phototransistor are both four-terminal devices, which each have a gate electrode G, a source electrode S, a drain electrode D and a well base electrode B, and the source electrode S or the drain electrode D of the first field-effect phototransistor is connected to the source electrode S or the drain electrode D of the second field-effect phototransistor. By means of the present disclosure, the complexity of the array structure and the operating method can be simplified, the operational parallelism can be increased, and the requirements of multiplexing an operational matrix can be met.

ZHOU ZHENG (CN)
LI JIAQI (CN)
YU GUIHAI (CN)
KANG JINFENG (CN)
LIU XIAOYAN (CN)
HUANG PENG (CN)

PCT/CN2022/128624

May 10, 2024

October 31, 2022

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PEKING UNIV (CN)

H01L27/00

CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (No. 87 West 3rd Ring North Rd., Haidian District, Beijing 9, CN)

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