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Title:
CLEANING METHOD FOR IMPROVING EPITAXIAL STACKING FAULT
Document Type and Number:
WIPO Patent Application WO/2024/051134
Kind Code:
A1
Abstract:
The present invention relates to the technical field of semiconductors. A cleaning method for improving an epitaxial stacking fault is characterized in cleaning a cleaning machine. A primary deionized water tank, a primary reagent tank, a secondary reagent tank, a secondary deionized water tank, a tertiary deionized water tank, a fourth deionized water tank and a fifth deionized water tank connected in sequence are arranged on the cleaning machine from left to right; and the primary reagent tank and the secondary reagent tank are each provided with a heating mechanism. The cleaning steps of the cleaning machine comprise: injecting deionized water into the primary reagent tank and the secondary reagent tank; heating the deionized water; and when the temperature of the deionized water rises to 60-90°C, injecting the deionized water in the primary reagent tank and the secondary reagent tank into the secondary deionized water tank, the tertiary deionized water tank, the fourth deionized water tank and the fifth deionized water tank. The cleaning time is 0.5-2 h. According to the present invention, the cleaning process of the cleaning machine is optimized, and the cleaning machine cleaned after heating solves the problem of an epitaxial stacking fault of a silicon wafer.

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Inventors:
SUN TAO (CN)
HU JIULIN (CN)
HONG YI (CN)
Application Number:
PCT/CN2023/081613
Publication Date:
March 14, 2024
Filing Date:
March 15, 2023
Export Citation:
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Assignee:
SHANGHAI SEMICONDUCTOR WAFER TECH CO LTD (CN)
International Classes:
H01L21/02; B08B3/04; B08B3/10
Foreign References:
CN114664640A2022-06-24
JP2000294532A2000-10-20
CN113257660A2021-08-13
JPH07313947A1995-12-05
JPH09219386A1997-08-19
US5520744A1996-05-28
CN109647782A2019-04-19
CN113736580A2021-12-03
Attorney, Agent or Firm:
SHANGHAI DAYCREATE INTELLECTUAL PROPERTY CO., LTD. (CN)
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