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Title:
CHALCOGENIDE PEROVSKITE
Document Type and Number:
WIPO Patent Application WO/2024/075699
Kind Code:
A1
Abstract:
This chalcogenide perovskite has an average particle size of less than 40 nm, and the actual band gap value matches the range of a semiconductor-specific band gap (Eg, bulk) calculated according to formula (A) on the basis of the calculated value (E g, calc(HSE06)) of the band gap determined by a density functional method that uses a hybrid functional (HSE 06).

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Inventors:
KIMOTO YOSHINORI (JP)
INATOME TORU (JP)
KATO TAKUYA (JP)
Application Number:
PCT/JP2023/035933
Publication Date:
April 11, 2024
Filing Date:
October 02, 2023
Export Citation:
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Assignee:
IDEMITSU KOSAN CO (JP)
International Classes:
C01G25/00; C09K11/67; C09K11/88
Domestic Patent References:
WO2023100919A12023-06-08
Foreign References:
US20190225883A12019-07-25
US20230322576A12023-10-12
Other References:
JONATHAN W. TURNLEY: "Solution Deposition for Chalcogenide Perovskites: A Low-Temperature Route to BaMS 3 Materials (M = Ti, Zr, Hf)", JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, AMERICAN CHEMICAL SOCIETY, vol. 144, no. 40, 12 October 2022 (2022-10-12), pages 18234 - 18239, XP093156689, ISSN: 0002-7863, DOI: 10.1021/jacs.2c06985
YANG RUIQUAN, JESS ALEXANDER D., FAI CALVIN, HAGES CHARLES J.: "Low-Temperature, Solution-Based Synthesis of Luminescent Chalcogenide Perovskite BaZrS 3 Nanoparticles", JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, AMERICAN CHEMICAL SOCIETY, vol. 144, no. 35, 7 September 2022 (2022-09-07), pages 15928 - 15931, XP093068846, ISSN: 0002-7863, DOI: 10.1021/jacs.2c06168
Attorney, Agent or Firm:
HEIWA INTERNATIONAL PATENT OFFICE (JP)
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