Title:
C-FREE HIGH-SELECTIVITY SILICON NITRIDE ETCHING SOLUTION
Document Type and Number:
WIPO Patent Application WO/2024/007627
Kind Code:
A1
Abstract:
Disclosed in the present invention is a C-free high-selectivity silicon nitride etching solution, which mainly comprises an inorganic acid, an inorganic silicon compound, a pre-solvent, an inorganic dispersant and water. The etching solution of the present invention can improve the etching selection ratio of silicon nitride to silicon oxide and selectively remove a nitride film, such that the service life of the etching solution is prolonged, the high-temperature stability of the etching solution is improved, and an organic colloid is prevented from remaining on the wafer.
Inventors:
LI SHAOPING (CN)
HE ZHAOBO (CN)
FENG KAI (CN)
YE RUI (CN)
ZHANG TING (CN)
CUI HUIDONG (CN)
WANG SHUPING (CN)
JIANG FEI (CN)
FENG FAN (CN)
BAN CHANGSHENG (CN)
XU ZIHAO (CN)
HE ZHAOBO (CN)
FENG KAI (CN)
YE RUI (CN)
ZHANG TING (CN)
CUI HUIDONG (CN)
WANG SHUPING (CN)
JIANG FEI (CN)
FENG FAN (CN)
BAN CHANGSHENG (CN)
XU ZIHAO (CN)
Application Number:
PCT/CN2023/083354
Publication Date:
January 11, 2024
Filing Date:
March 23, 2023
Export Citation:
Assignee:
HUBEI SINOPHORUS ELECTRONIC MAT CO LTD (CN)
International Classes:
C09K13/06; H01L21/311
Foreign References:
| CN115287071A | 2022-11-04 | |||
| CN109689838A | 2019-04-26 | |||
| CN110804441A | 2020-02-18 | |||
| CN110846040A | 2020-02-28 | |||
| CN111849487A | 2020-10-30 | |||
| CN114250077A | 2022-03-29 | |||
| CN114369461A | 2022-04-19 | |||
| CN114621769A | 2022-06-14 | |||
| JP2021086943A | 2021-06-03 | |||
| JP2020145343A | 2020-09-10 | |||
| US20090218542A1 | 2009-09-03 |
Attorney, Agent or Firm:
YICHANG THREE GORGES PATENT (CN)
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