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Title:
BONDING MEMBER AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/069866
Kind Code:
A1
Abstract:
Provided is a bonding member (1) that bonds a first object (2) and a second object (3). The bonding member (1) includes: metal particles (11) containing Ni as a main component; a low-melting-point phase (12) including Sn as a main component and having a melting point of less than 300°C; and an intermetallic compound (13) that is the result of interdiffusion between the Sn and the metal particles (11) and has a melting point of 300°C or greater. The percentage of the amount of the low-melting-point phase (12) to the total amount of the bonding member (1) is greater than or equal to 2 vol% and less than 20 vol%. The thermal expansion coefficients of the first object (2) and the second object (3) are greater than or equal 3 x 10-6/K and less than 13 x 10-6/K, and the difference between the thermal expansion coefficients of the first object (2) and the second object (3) is less than 5 x 10-6/K. The thermal expansion coefficient of the bonding member (1) is greater than or equal to 16 x 10-6/K and less than 20 x 10-6/K.

Inventors:
YAMAZAKI KOJI (JP)
SAKAI NORIKAZU (JP)
Application Number:
PCT/JP2022/036485
Publication Date:
April 04, 2024
Filing Date:
September 29, 2022
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP (JP)
International Classes:
H01L23/40; B23K35/26
Domestic Patent References:
WO2017119205A12017-07-13
WO2018030262A12018-02-15
Foreign References:
JP2010506733A2010-03-04
JP2021037547A2021-03-11
JP2014147966A2014-08-21
JP2017039167A2017-02-23
JP2017172029A2017-09-28
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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