Title:
ADDITIVE FOR 193 NM DRY PHOTORESIST AND PREPARATION METHOD FOR AND APPLICATION OF ADDITIVE
Document Type and Number:
WIPO Patent Application WO/2023/092817
Kind Code:
A1
Abstract:
An additive for 193 nm dry photoresist and a preparation method for and application of the additive. The structure of the additive is as shown in formula I, the weight-average molecular weight is 1000-3000, and the ratio of the weight-average molecular weight to the number-average molecular weight is 1-5. By using the additive, photoresist can form a photoresist film micropattern having excellent sensitivity and high resolution.
Inventors:
FANG SHUNONG (CN)
WANG SU (CN)
GENG ZHIYUE (CN)
CUI ZHONGYUE (CN)
WANG SU (CN)
GENG ZHIYUE (CN)
CUI ZHONGYUE (CN)
Application Number:
PCT/CN2021/143502
Publication Date:
June 01, 2023
Filing Date:
December 31, 2021
Export Citation:
Assignee:
SHANGHAI SINYANG SEMICONDUCTOR MAT CO LTD (CN)
CHINA ADVANCED LITHOGRAPHIC MATERIAL TECH CO LTD (CN)
CHINA ADVANCED LITHOGRAPHIC MATERIAL TECH CO LTD (CN)
International Classes:
C08G67/04; G03F7/004
Foreign References:
| CN1305608A | 2001-07-25 | |||
| CN103186041A | 2013-07-03 | |||
| CN103980417A | 2014-08-13 | |||
| CN1869815A | 2006-11-29 | |||
| CN111061126A | 2020-04-24 | |||
| JP2013083973A | 2013-05-09 | |||
| CN1267000A | 2000-09-20 | |||
| CN111863601A | 2020-10-30 |
Other References:
LI XIAOOU, GU XUE-SONG; LIU YA-DONG; JI SHENG-XIANG: "Research Progress on Chemically Amplified 193nm Photoresists", CHINESE JOURNAL OF APPLIED CHEMISTRY - YINGYONG HUAXUE, KEXUE CHUBANSHE, CN, vol. 38, no. 9, 30 September 2021 (2021-09-30), CN , pages 1105 - 1118, XP093069031, ISSN: 1000-0518, DOI: 10.19894/j.issn.1000-0518.210264
Attorney, Agent or Firm:
SHANGHAI BESHINING LAW OFFICE (CN)
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