PURPOSE: To acquire a device wherein an inside series resistance of an element during injection of holes can be reduced and low consumption power can be realized by constituting an active layer of an undoped material, by constituting a first clad layer of a p-type dope material and by forming a p-type electrode for injecting holes in an upper surface of the first clad layer.

CONSTITUTION: This device is provided with an active layer 10 for radiating light, a first clad layer 11 formed in an upper surface of the active layer 10, a second clad layer 9 formed in a lower surface of the active layer 10, an upper reflection film 16 formed on an upper surface of the first clad layer 11 and a lower reflection film 15 formed on a lower surface of the second clad layer 9. In such a surface light emission element, the active layer 10 is constituted of an undoped material, the first clad layer 11 is constituted of a p-type doped material and a p-type electrode 17 for injecting holes is formed on an upper surface of the first clad layer 11. For example, a second clad layer 9 consisting of undoped AlGaAs, an active layer 10 consisting of undoped GaAs, a first clad layer 11 consisting of p-type AlGaAs, etc., are provided.