Title:
半導体記憶装置の制御方法及び半導体記憶装置
Document Type and Number:
Japanese Patent JP4111789
Kind Code:
B2
Abstract:
A method for controlling a semiconductor memory in which mode register can be set in burst mode. To set an operation mode in burst mode, the semiconductor memory is changed first from the burst mode, through power-down mode, to standby mode of non-burst mode. Then the semiconductor memory is changed to mode register set mode to set the mode register when commands are input in the same predetermined sequence that is used in the non-burst mode.
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Inventors:
Shinya Fujioka
Shinichi Yamada
Mitsunori Sato
Ohno Jun
Shinichi Yamada
Mitsunori Sato
Ohno Jun
Application Number:
JP2002268975A
Publication Date:
July 02, 2008
Filing Date:
September 13, 2002
Export Citation:
Assignee:
富士通株式会社
International Classes:
G11C11/401; G11C7/10; G11C7/22; G11C11/403; G11C11/407; G11C11/4072; G11C11/4193
Domestic Patent References:
| JP2002074952A | ||||
| JP2002025288A | ||||
| JP7029396A | ||||
| JP8124380A | ||||
| JP2000048562A | ||||
| JP2000011652A |
Attorney, Agent or Firm:
Takeshi Hattori