Title:
半導体装置および半導体装置の製造方法
Document Type and Number:
Japanese Patent JP6783689
Kind Code:
B2
Abstract:
A semiconductor device includes a substrate, a wiring formed on the substrate, an anti-reflection film of titanium nitride formed on the wiring, and a silicon oxide film formed on the anti-reflection film. A pad portion which exposes the wiring is formed at a place where a first opening portion and a second opening portion overlap with each other. A metal nitride region containing fewer dangling bonds is formed from a metal nitride film containing fewer dangling bonds than in the anti-reflection film in at least a part of one or both of an opposed surface of the anti-reflection film which faces the silicon oxide film above the anti-reflection film, and an exposed surface of the anti-reflection film which is exposed in the second opening portion.
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Inventors:
Shinjiro Kato
Masaru Akino
Masaru Akino
Application Number:
JP2017048802A
Publication Date:
November 11, 2020
Filing Date:
March 14, 2017
Export Citation:
Assignee:
Abric Co., Ltd.
International Classes:
H01L21/3205; C23C14/06; C23C14/34; H01L21/28; H01L21/285; H01L21/60; H01L21/768; H01L23/522
Domestic Patent References:
| JP2012054400A | ||||
| JP9181115A | ||||
| JP11238732A | ||||
| JP2001326192A | ||||
| JP11163138A | ||||
| JP3049231A |