Title:
成膜方法及び成膜装置
Document Type and Number:
Japanese Patent JP7153582
Kind Code:
B2
Abstract:
A film forming method of forming a silicon carbide film on a substrate to be processed includes: forming the silicon carbide film on the substrate to be processed by loading a holder that holds the substrate to be processed into a processing container of a film forming apparatus to place the holder on a stage, and supplying a raw material gas into the processing container; and removing a reaction product, which has been adhered to a part other than the substrate to be processed during the forming the silicon carbide film, by loading a plate-shaped member having at least a surface formed by pyrolytic carbon into the processing container to place the plate-shaped member on the stage, and supplying a fluorine-containing gas into the processing container.
Inventors:
Masayuki Harashima
Shio Sano
Mitsuichi Nakamura
Hirokatsu Kobayashi
Shio Sano
Mitsuichi Nakamura
Hirokatsu Kobayashi
Application Number:
JP2019017111A
Publication Date:
October 14, 2022
Filing Date:
February 01, 2019
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/205; C23C16/42; C23C16/44; C30B25/12; C30B29/36
Domestic Patent References:
| JP2012054528A | ||||
| JP2009135228A | ||||
| JP2015119107A | ||||
| JP2017011102A | ||||
| JP2005320208A | ||||
| JP5062912A | ||||
| JP2015040153A |
Foreign References:
| WO2016113924A1 |
Attorney, Agent or Firm:
Kanemoto Tetsuo
Koji Hagiwara
Naoki Ogita
Takashi Saito
Takuya Mine
Koji Hagiwara
Naoki Ogita
Takashi Saito
Takuya Mine