To prevent a thin film from being unexpectedly deposited on a cleavage plane when a cleavage operation is carried out for the formation of a semiconductor element.

Second crystal fixing members 9 and 10 are arranged in a region on a pad 8 so as to pinch a semiconductor crystal 11 between them in a lower region, and the lower region of the semiconductor crystal 11 is fixed between the second crystal fixing members 9 and 10. The bottom of an L-shaped movable unit 13 is arranged on the other region of the pad 8. A movable unit fixing member 18 is arranged on the movable unit 13 so as to fix the movable unit 13 on the pad 8 with a third screw 19. The upper region of the semiconductor crystal 11 is fixed so as to move together with the movable unit 13. The movable unit 13 contains a shape memory alloy, and the shape memory alloy has previously memorized a certain shape and furthermore has previously undergone treatment for removing a mixture contained inside at high temperatures.