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WO/2023/056242A1 |
A FET switch stack has a stacked arrangement of FET switches, a gate resistor network with ladder resistors and common gate resistors, and a gate resistor bypass arrangement. The bypass arrangement has a first set of bypass switches conn...
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WO/2023/052417A1 |
The invention relates to an ophthalmic laser system (14) comprising at least one electrical load element (20) and a device (10) for controlling an electrical energy supply for the electrical load element (20). The device (10) for control...
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WO/2023/056244A1 |
An apparatus for reducing switching time of RF FET switching devices is described. A FET switch stack includes a stacked arrangement of FET switches and a plurality of gate feed arrangements, each coupled at a different height of the sta...
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WO/2023/052090A1 |
Displacement or Pressure Sensing System for a Touchpad or KeyboardThe present invention generally relates to a displacement or pressure sensor, to a sensing system comprising a plurality of such sensors, and to a temperature compensation...
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WO/2023/046609A1 |
The present invention relates to a method (100) for detecting a short circuit in a transistor (2), comprising modulating (101) a first signal of alternating amplitude onto a gate voltage of the transistor (2), wherein the first signal ha...
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WO/2023/049571A1 |
Circuits and methods that provide wider bandwidth and smaller IM inductances for phase change material (PCM) based RF switch networks. The present invention recognizes that it is beneficial to consider the total high parasitic capacitanc...
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WO/2023/046612A1 |
The present invention relates to a device (1) for switching a transistor (2) when voltage is applied, comprising: a transistor (2) which has a control input (2a) and two switching inputs (2b, 2c), wherein, via the control input (2a), the...
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WO/2023/047745A1 |
A semiconductor device 1 comprises: a split gate type output transistor 9 configured such that a plurality of channel regions are controlled individually in accordance with a plurality of gate control signals G1 and G2; an active clamp c...
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WO/2023/046607A1 |
The present invention relates to a method and a circuit arrangement for operating an insulated gate semiconductor component (10), wherein a method for switching on the insulated gate semiconductor component (10) comprises the following s...
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WO/2023/041366A1 |
The invention relates to a device for a vehicle access control system, comprising: - a main electrode (110) for carrying out a capacitive-type approach detection; and - a transmitting and receiving antenna which is formed by a coil and i...
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WO/2023/042417A1 |
The disclosure concerns a method for protecting against overvoltage a current fed converter, comprising a switching cell having two or more legs, each leg being provided with at least one switching device, in an open circuit failure cond...
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WO/2023/041825A1 |
The present invention comprises a parallel association of two thyristors of different rated current / n1 and I n2 , being I n1 > I n2 , their blocking currents further being such that they follow l L1 > l L2 . Thus, the formation of an A...
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WO/2023/044273A1 |
Circuits and methods that enable stable and reliable "hot switching" from one antenna to another without turning RF power to the antennas OFF in wireless RF systems during at least some transmission events. One embodiment comprises an RF...
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WO/2023/041303A1 |
A reset device for resetting a controller of a motor is provided. The device comprises a first delay circuit configured to discharge a first voltage and a second delay circuit configured to discharge a second voltage. A reset circuit is ...
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WO/2023/044156A1 |
Systems and methods for detecting and classifying types of physical inputs on an input surface of a human machine interface (HMI) input structure are disclosed. In response to a physical input on the input surface, one or more sensor sig...
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WO/2023/039576A1 |
A physical arrangement of at least two power switches and at least one capacitor in a power loop. At least one of the switches is formed of at least two parallel electronic devices, such as transistors. The arrangement minimizes total po...
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WO/2023/037611A1 |
The present invention stabilizes a control signal for an element that supplies a drive current to a light-emitting element. According to the present invention, a drive device includes a switch element, a current-limiting element, a curre...
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WO/2023/035092A1 |
Disclosed is an discloses an ultra thin photoelectric key structure having balanced pressing. An optical gate structure is an optical gate wing coupled to a linked wing, the linked wing and the optical gate wing being coupled to perform ...
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WO/2023/037833A1 |
In this driving circuit for semiconductor elements according to one aspect of the present disclosure, an abnormality detection unit 9 outputs an abnormality detection signal to a normal driving unit 8 upon detecting that overcurrent has ...
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WO/2023/035271A1 |
A driving circuit and an electronic device, comprising a first switch (GaN1), a second switch (GaN2), a first control module (1) and a second control module (2). A first control signal (PWM1) is inputted to the first control module (1), ...
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WO/2023/037635A1 |
Provided is a technology that suppresses oscillation noise of a semiconductor device and allows suppression of mirror noise. The present invention comprises: a switching device that conducts or opens a state between a drain terminal and ...
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WO/2023/031687A2 |
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WO/2023/032430A1 |
A gate driver 401 comprises: a gate driving circuit 410 configured to generate a gate driving signal G1 for a power element 402 in response to a gate control signal S1; and a driving performance switching circuit 420 configured to enhanc...
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WO/2021/108487A9 |
A Josephson parametric device is presented, which includes an input port, an output port, and a signal path between the input port and the output port. The signal path includes a first section coupled to the input port and having a first...
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WO/2023/032612A1 |
A transformer chip of this signal transmission device comprises a substrate, an element insulation layer, and a first transformer and a second transformer provided within the element insulation layer. The first transformer is provided wi...
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WO/2023/034528A1 |
A radiation tolerant discrete reference voltage source includes just two bipolar junction transistors, five resistors, and a Zener diode. Two of the resistors form a voltage divider that outputs a reference voltage. Values of the resisto...
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WO/2023/031489A1 |
Disclosed is a switch module based on proximity activation by means of an infrared (IR) reflective sensor that is activated only by IR light from the module. The module is activated and deactivated by the approach of a body to the activa...
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WO/2023/032413A1 |
This semiconductor device comprises: high-side and low-side, first and second output transistors; a first terminal that connects to a connection node between the first and second output transistors; and a second terminal configured to co...
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WO/2023/025459A1 |
A circuit for controlling a load is presented. The circuit comprises: - a semiconductor power switch, which has a control input, a first power terminal and a second power terminal; - a comparator circuit, which has a first input, a secon...
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WO/2023/026350A1 |
A switched capacitor circuit for a capacitive sensor system includes an amplifier having a first input terminal, a second input terminal, and an output coupled to the second input terminal. The first input terminal is a non-inversion inp...
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WO/2023/028108A1 |
In one example (oscillator configuration 100), a switched circuit includes first (106_2) and second (106_4) transistors. The first transistor has a first gate and a first source/drain path. The second transistor has a second gate and a s...
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WO/2023/028060A1 |
In described examples, a circuit includes a switch 104. The switch 104 includes first transistors and second transistors. A voltage generation circuit 120 is coupled to the switch 104. A level shifter 130 is coupled to the voltage genera...
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WO/2023/025609A1 |
The invention relates to a method (100) for operating an apparatus having an electrochemical energy accumulator, an electronic high-voltage switch and a DC protection circuit which is connected parallel to the electronic high-voltage swi...
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WO/2023/026659A1 |
A light receiving unit according to the present invention is provided with: a light receiving element which receives a pulsed light group projected by a projection unit at a prescribed cycle and outputs a first signal; a conversion circu...
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WO/2023/024092A1 |
Disclosed in the utility model are a touch key module and a control panel. The touch key module comprises a panel and a PCB arranged at the rear part of the panel in parallel. A key position is disposed on the panel. A capacitive touch s...
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WO/2023/026655A1 |
A load driving device (1) comprises: a driving control unit (3) which controls a switching circuit (2) that opens and closes a power supply path (L1); and a circuit protection mechanism (4) which protects the switching circuit (2) when a...
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WO/2023/022901A1 |
Multi-way signal switch designs and methods for reducing parasitic capacitance. In a first embodiment, two or more series-coupled FET shunt-switches are coupled to at least one switch cell through- switch. At least one shunt-switch is se...
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WO/2023/020284A1 |
Disclosed in the present utility model is an easy-to-assemble switch, comprising a contact-press assembly, wherein the contact-press assembly comprises a base and an upper cover arranged above the base, the base and the upper cover are c...
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WO/2023/021576A1 |
In the present invention, a high resolution digital-analog conversion circuit comprises: a quantum Hall element 31 having a resistance value R; a quantum Hall element pair 32a having a resistance value 2R; a quantum Hall element 31b conn...
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WO/2023/022792A1 |
A common gate resistor bypass arrangement for a stacked arrangement of FET switches, the arrangement including a series combination of an nMOS transistor and a pMOS transistor connected across a common gate resistor. During at least a tr...
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WO/2023/018769A1 |
Bi-directional trench power switches. At least one example is a semiconductor device comprising: an upper base region associated with a first side of a substrate of semiconductor material; an upper-CE trench defined on the first side, th...
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WO/2023/017902A1 |
Disclosed are a high-speed semiconductor device driving circuit and system for power. The semiconductor device driving circuit comprises a transformation unit, a rectification unit, a pulse shaping unit, and a driving voltage application...
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WO/2023/013118A1 |
The present technology relates to an information processing device and an information processing method which enable highly robust resetting to be performed without providing a dedicated reset terminal. An input signal is input from a co...
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WO/2023/011838A1 |
The invention relates to a method for providing a control signal (26, 27, 28, 38, 39) for a domestic appliance (1), wherein an operating device (2) has a rotary knob (3), a surface (8) of a component (9) which is designed to hold the rot...
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WO/2023/013430A1 |
This detection method includes an acquisition step (S12) for periodically and repeatedly acquiring a sensor value outputted from a capacitance sensor, a determination step (S13) for determining whether or not the acquired sensor value ex...
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WO/2023/011674A1 |
The object of the invention is a power control system that comprises a voltage supply, a set of power outputs (11) adapted for connecting electrical appliances, a control unit (2), and a door sensor (3), wherein the control unit (2) is c...
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WO/2023/006500A1 |
The invention relates to an electronic spatial system (10) comprising: an electronic circuit (12, 14) that is sensitive to spatial radiation, comprising at least one signal input port and/or at least one signal output port; a signal proc...
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WO/2023/007861A1 |
[Problem] To improve robustness against power supply noises. [Solution] This semiconductor circuit comprises: a first transistor for switching whether or not to take in an input signal to a first node; a second transistor having at least...
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WO/2023/006491A1 |
The invention relates to a device (100) for switching a plurality of semiconductor transistors (101, 102) connected in parallel, comprising a gate driver stage (103), a high-side switch (104), and a low-side switch (111), the output of s...
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WO/2023/008425A1 |
The present invention comprises: a main element (110) for controlling an electric current flowing through a wire harness (40); a sensing element (111) through which flows an electric current corresponding to an electric current flowing t...
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