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WO/2002/005268A2 |
A memory device (100) is described which includes memory cells (102), access lines, and support electronics (104, 106, 108, 110) for facilitating access to information stored in the memory cells via the access lines. Both the memory cell...
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WO/2002/003481A1 |
The invention relates to a three-port component comprising an emitter (1), a collector (2) and a base (3). Said component is characterised in that the collector (2) and the base (3) are ferromagnetic layers between which a tunnel insulat...
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WO/2001/099100A1 |
A magnetic recording disk is patterned into discrete magnetic and nonmagnetic regions with the magnetic regions serving as the magnetic recording data bits. The magnetic recording layer (20) comprises two ferromagnetic films (22, 24) sep...
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WO/2001/099099A2 |
A robust GMR or TMR effect type multilayer structure comprising a free and a pinned ferromagnetic layer, with a wide magnetic field range is described, as required, for example in automotive applications. The improvement is obtained by u...
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WO/2001/099206A1 |
A so-called CPP-GMR device comprises a nonmagnetic thin film the major component of which is a metal having a specific resistance of 4 $g(m)$g(V)•cm to 200 $g(m)$g(V)• cm. The resistance does not become too high even if the device ar...
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WO/2001/093286A1 |
A magnetic thin film which can be produced by the same dry process as that for a magnetoresistance element forming a reproduction head, and is provided with excellent soft magnetic characteristics suitable as a recording head magnetic po...
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WO/2001/087458A1 |
The present invention relates to magnetic particle separators using micromachined magnetic arrays (52) deposited on to a substrate (50).
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WO/2001/088525A1 |
The present invention provides microfluidic systems, which have structurally programmable (PFD), reconfigurable, and multi-sample analysis capabilities. In one embodiment, the device includes structurally programmable fluidic paths, pass...
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WO/2001/084570A2 |
An improved and novel device and fabrication method for a magnetic element, and more particularly a magnetic element (10) including a first electrode (14), a second electrode (18) and a spacer layer (16). The first electrode (14) and the...
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WO/2001/078070A1 |
The present invention relates to a magnetic film having a magnetic easy axis in a pre-formed area, and a method of forming the magnetic film. Especially, the present invention relates to a method of forming a multiple magnetic easy-axis ...
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WO/2001/075894A2 |
A system for storing data on a magnetic medium (140) using spin polarized electron beams is provided. The system includes a source (110) of spin polarized electrons and a storage medium (140) disposed a selected distance from the source....
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WO/2001/073762A2 |
A magnetic recording disk has a magnetic recording layer formed on a special multilayered 'host' layer (30). The host layer comprises at least two ferromagnetic films (32, 34) that are exchange-coupled antiferromagnetically (AF) to one a...
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WO/2001/070873A2 |
Pathways to the fabrication of nanocylinder arrays are provided. Methods are described for the production of well-ordered arrays of nanopores, nanowired, and other materials. This is accomplished by orienting copolymer films and removing...
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WO/2001/071734A2 |
An improved and novel multi-layer thin film device including a graded-stoichiometry insulating layer (16) and a method of fabricating a multi-layer thin film device including a graded-stoichiometry insulating layer (16). The device struc...
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WO/2001/071735A1 |
An improved and novel magnetic element and fabrication method. The magnetic element (10;30) including a bottom pinned ferromagnetic layer (12;32) and a top pinned ferromagnetic layer (20;40) fabricated antiparallel to one another. The ma...
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WO/2001/067460A1 |
In a magnetic data storage system or a magnetic sensing system including a GMR-structure, a set of structures is introduced that influences an intrinsic magnetic or magneto resistance characteristic such as the field-offset of the GMR-st...
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WO/2001/067469A1 |
A magnetic field element provided with a stack of a first magnetic layer structure (7), a second magnetic layer structure (11) having a substantially fixed direction of magnetization (M¿11?), and a spacer layer structure (9) separating ...
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WO/2001/065269A1 |
The invention relates to an assembly for measuring a magnetic field, comprising at least a first layer assembly (8) and at least a second layer assembly (10), whereby the first layer assembly (8) and the second layer assembly (10) have a...
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WO/2001/063628A1 |
High-melting metal layers (2), (4), (6), (8), and (10) are stacked alternately with magnetic rare-earth alloy layers (3), (5), (7), (9), (11), and (12) to form on a substrate a layered structure composed of four or more unit layers. The ...
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WO/2001/059768A2 |
A magnetic head including a first writer pole (100) disposed on a second writer pole (102). The second pole forms a magnetic path with the first pole and first pole includes a film with a chemical formula of (Fe¿60?Co¿40?)¿100-x?M¿x?...
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WO/2001/056090A1 |
A magnetoresistance effect device having a structure of artificial lattice or spin-bulb type, a high MR ratio with as small a quantity of oxygen as possible in a multiplayer structure, and an excellent thermal stability. The magnetoresis...
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WO/2001/055474A1 |
A method of making a thin film nano-material, the method comprising simultaneously depositing atoms of a ferro-magnetic substance together with clusters of a non-magnetic substance onto a surface, thereby providing a thin film nano-mater...
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WO/2001/054145A1 |
A magnetic substance having the maximum value of complex permeability in quasi-microwave range is provided for suppressing a high frequency noise in a small-sized electronic apparatus. The magnetic substance is of a magnetic composition ...
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WO/2001/051949A1 |
A dual spin-valve magnetoresistive sensor (24) includes a free ferromagnetic layer (30) and first and second nonmagnetic conductive spacers (32, 34) adjacent to opposing first and second surfaces of the free layer, respectively. A pinned...
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WO/2001/039219A1 |
A recording head having magnetic poles with a high saturated magnetic flux density, a high permeability, and a high electrical resistivity. The poles are polycrystalline films containing 57.5 to 94.5 atomic percent of Fe, 1 to 15 atomic ...
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WO/2001/039195A1 |
A digital data memory having a bit structure (17) in a memory cell based on a dielectric intermediate separating material (14) with two major surfaces having thereon an anisotropic ferromagnetic thin-film (12, 13; 12', 13') of differing ...
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WO/2001/033585A1 |
A position-addressable combinatorial library of double-perovskite materials is disclosed. The library includes a plurality of multi-region substrates, and formed on the substrate regions are double-perovskite compounds having the formula...
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WO/2001/030511A1 |
A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO)¿6?) and bis(benzene)vanadium (V(C¿...
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WO/2001/031357A1 |
A magnetoresistive sensor including an oxide layer, a pinned layer, a non-magnetic spacer layer, a free magnetic layer, and a pinning layer. This sensor includes the pinning layer adjacent to the free magnetic layer. The free magnetic la...
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WO/2001/029841A1 |
Phase transition is controlled by controlling the fractal dimension of a fractal combination throughout the entire region or locally. In magnetic materials, a ferromagnetic phase transition temperature of magnetic fine particles disposed...
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WO/2001/029851A1 |
A composite magnetic body is obtained without the use of halogen-based or halogen-containing materials, such as, halogen-based binding agent of halogen-based resins or elastomers, and bromine-based fire retardants. The composite magnetic...
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WO/2001/029831A1 |
A fixed magnetic recording device capable of suppressing dispersions, at a manufacturing time, of a longitudinal bias magnetic field and an effective track width of a magnetic head of a hard bias system. In the magnetic recording device ...
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WO/2001/020356A1 |
A sensor (MRE) or memory element (ME) having a free (1, 2, 3) and a pinned (M¿p?, 6) magnetic layer separated by a separation layer (5). The free layer comprises a sandwich structure comprising two magnetic layers (1, 2), coupled anti-f...
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WO/2001/018816A1 |
A memory cell arrangement consisting of memory cells respectively comprised of two magnetoresistive elements. When the magnetoresistive elements of each memory cell are magnetized in such a way that they have different resistance values,...
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WO/2001/016411A1 |
A thin film of a single crystal ZnO having a high ferromagnetic transition temperature, which comprises a ferromagnetic p-type single crystal zinc oxide containing a transition metal element Mn and a p-type dopant, or a ferromagnetic p-t...
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WO/2001/013387A1 |
Disclosed is a method for producing a magnetic tunnel contact. A metal layer is disposed on a first ferromagnetic layer (1) and is oxidised for producing an insulation layer (3). A second ferromagnetic layer (2) is produced on the insula...
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WO/2001/007926A1 |
A method of manufacturing a magnetic tunnel junction device, in which a stack (1) comprising two magnetic layers (3, 7) and a barrier layer (5) extending in between is formed. One of the magnetic layers is structured by means of etching,...
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WO/2001/008176A1 |
A method of manufacturing a magnetic tunnel junction device, in which a stack (1) comprising two electrode layers (3, 7) and a barrier layer (5) extending in between is formed. One of the electrode layers is structured by means of etchin...
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WO/2001/004970A1 |
A ferromagnetic double quantum well tunnel magneto-resistance device which can obtain an infinite tunnel magneto-resistance ratio with a required bias voltage by utilizing a 2-dimensional electron (positive hole) system, a high sensitivi...
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WO/2000/079298A2 |
A novel magnetic data storage system and a sensing system of magnetic characteristics are disclosed; the systems have a magnetization direction that is irreversible in an external magnetic field. A method of manufacturing, a method of re...
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WO/2000/079547A1 |
An organic-inorganic composite magnetic material having superparamagnetism or ferromagnetism which comprises a metal powder and an organic radical chemisorbed on the surface thereof is prepared by a method which comprises reducing a salt...
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WO/2000/076621A1 |
Materials and methods for making and using magnetically enhanced composite materials are provided. Surfaces coated with compositions can be used to improve fuel cells, material separators, and other applications. A variety of devices can...
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WO/2000/074154A1 |
A magnetoresistant device comprises a high-resistance layer (13) and first and second magnetic layers (12, 14) sandwiching the high-resistance layer (13). The high-resistance layer (13) is a barrier for allowing a tunnel current to flow ...
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WO/2000/074042A1 |
A magnetic recording medium capable of restricting the effects of thermal agitation by simultaneously reducing an average grain size of magnetic crystal grains constituting a ferromagnetic metal film and their standard deviation without ...
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WO/2000/065578A1 |
A giant magnetoresistive stack (10) for use in a magnetic read head includes a NiFeCr seed layer (12), a ferromagnetic free layer (14), a nonmagnetic spacer layer (16), a ferromagnetic pinned layer (18), and a PtMnX pinning layer (20), w...
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WO/2000/065577A1 |
An exchange interaction bonding device having an excellent corrosion-resistance, a high unidirectional anisotropy coefficient J¿K?, a high blocking temperature T¿B?, excellent characteristics maintained even if the thickness of an anti...
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WO/2000/065614A1 |
A method for forming a magnetoresistance effect film, enabling manufacture of a magnetoresistive device having a high MR ratio by improving the flatness of the interfaces between layers without deteriorating the crystallinity of a multil...
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WO/2000/063714A1 |
A giant magnetoresistive stack (10) for use in a magnetic read head includes a NiFeCr seed layer (12), a ferromagnetic free layer (14), a nonmagnetic spacer layer (16), a ferromagnetic pinned layer (18), and a CrMnPt pinning layer (20). ...
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WO/2000/063715A1 |
A spin valve sensor (70) is disclosed, comprising a ferromagnetic free layer (76), a ferromagnetic pinned layer (80), a layer of non-ferromagnetic material (78) positioned between the free layer (76) and the pinned layer (80), and an ant...
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WO/2000/062311A1 |
A memory element comprising nanomagnets having a rotational symmetry selected in order to provide high remanence and a suitable coercivity. There is also a sensor element comprising nanomagnets having a rotational symmetry selected such ...
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