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JP6827461B2 |
The molybdenum crucible includes a cylindrical side wall and a bottom provided integrally with one end of the side wall. The side wall includes a coarse grain region configured to extend from an outer wall toward an inner wall and a fine...
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JP6828670B2 |
A melting work device and a melting work method by which work can be easily performed on a melting furnace without a worker approaching the melting furnace. A melting work device performs work on a melt obtained by melting a material in ...
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JP2021011994A |
To provide a melting device system capable of facilitating the control of the feed of electric power to a heating coil part.A melting device system 100 comprises a melting device 2 having an induction heating coil part 60 into which a me...
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JP6807926B2 |
The invention relates to a cold crucible furnace comprising: a crucible intended for containing an electrically conductive material to be melted, with walls made of an electrically conductive material, and comprising a lateral cylindrica...
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JP6800627B2 |
A method for manufacturing glass, including the steps of heat-melting a raw material for producing glass by using a melting furnace having a plurality of gas flow paths while the raw material is levitated from the melting furnace by a ga...
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JP6790927B2 |
To provide a crystal growth apparatus capable of preventing efficiently raw material solidification on a crucible bottom part caused by lengthening of a crystalline to be grown, concerning a single crystal growth apparatus by a Czochrals...
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JP6775868B2 |
To provide an energizing heating apparatus that can efficiently continue energizing and heating in a stable state by a simple structure.A top electrode 16 is arranged at a top part of a crucible 11 having conductivity, and a bottom elect...
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JP6772311B2 |
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JP6767652B2 |
To provide a cold crucible melting furnace enabling a state in which an induction current [eddy current] circulating around a tubular cooling water passage in each of the segments to be prevented*restricted, a loss of fed electrical powe...
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JP6762206B2 |
To provide a molten metal holding device capable of preventing the sticking solidification of a molten substance to the inner wall of a crucible caused by molten metal scattering, also easy in the exchange of a heater, and reduced in the...
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JP6750550B2 |
To provide a crystal growth apparatus capable of efficiently preventing the raw material of a crucible bottom from being solidified accompanying a long size of a crystal body to be grown in an apparatus for growing a single crystal by th...
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JP6748309B2 |
A metal oxide barrier and a connecting method for solving the problems in which sectors of an existing cold crucible are connected by means of a mica plate and the mica plate is damaged due to arcing and the like and in which the sectors...
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JP2020121891A |
To provide an impregnation crucible which has improved use life.A method for manufacturing an impregnation crucible includes: a depressurization step (A) of putting a reduced and fired crucible material 10 into an empty impregnation tank...
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JP2020121892A |
To provide an impregnation crucible which has improved use life.A method for manufacturing an impregnation crucible includes: a depressurization step (A) of putting a reduced and fired crucible material 10 into an empty impregnation tank...
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JP2020121890A |
To provide an impregnation crucible which has improved use life.A method for manufacturing an impregnation crucible includes: a depressurization step (A) of putting a reduced and fired crucible material 10 into an empty impregnation tank...
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JP6736162B2 |
To provide a graphite crucible capable of efficiently melting-holding the raw material of a casting in casting, and a melting-holding furnace using the same.Provided is a graphite crucible comprising: a crucible furnace melting the raw m...
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JP6729484B2 |
To suppress reduction of oxygen concentration at a periphery of a silicon single crystal and thus to enhance uniformity of in-plane distribution of oxygen concentration in a production method of the silicon single crystal by a HMCZ proce...
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JP6729257B2 |
To provide an operation method of a high-frequency output, which stabilizes a crucible bottom temperature to a target temperature, when an oxide single crystal is raised by a rotation Czochralski method.The operation method of the high-f...
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JP6726617B2 |
The present invention addresses the problem of providing a heating furnace that sufficiently exhibits the microwave effect produced by microwave heating and allows economical heating taking advantage of the characteristics of each heatin...
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JP6719718B2 |
To provide a manufacturing method of a Si ingot crystal capable of obtaining a Si ingot crystal having various shapes having low strain, low dislocation or low oxygen concentration; and to provide a manufacturing apparatus of the Si ingo...
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JP2020085389A |
To provide a cold crucible structure in which melting efficiency and energy can be improved together with mechanical/thermal stability.A cold crucible structure 10 comprises: a cold crucible part 100 including an upper cap and a lower ca...
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JP6702249B2 |
To provide a production method of an oxide single crystal capable of suppressing generation of a void.In a production method of an oxide single crystal for rearing a single crystal of oxide from a melt of an oxide raw material in a cruci...
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JP6674881B2 |
To provide an Ir alloy crucible that not only has been improved in high-temperature strength, but also resists plastic deformation at high temperature, with an amount of use of Pt reduced for low-cost production.A crucible is composed of...
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JP6660851B2 |
To melt an aluminum material in a state preventing the formation of an oxide film as much as possible and improving thermal energy efficiency while minimizing and simplifying the apparatus itself.A superheated steam generating part inclu...
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JP6659366B2 |
This metal melting device is provided with a crucible 20 for storing molten metal therein, a stirring part 30 for stirring the molten metal in the crucible 20, and a heating part 40 for heating the crucible 20. The stirring part 30 inclu...
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JP2020030012A |
To effectively replace the lining material of an induction furnace without requiring troublesome preparation before the replacement work.A replacement method of a lining material attached to the inside of an induction furnace, according ...
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JP6655265B2 |
To provide a manufacturing method of a MgSiSncrystal, the manufacturing method being capable of recycling a crucible and growing the MgSiSncrystal having a good crystallinity with no bubble at all, and a manufacturing apparatus.A manufac...
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JP6655587B2 |
A process for producing high-purity magnesium by means of distillation at reduced pressure, characterized in that, the high-purity magnesium condenses in the liquid state, whereby the starting material in the form of a magnesium-containi...
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JP2020026367A |
To provide a manufacturing apparatus of a silicon carbide single crystal capable of suppressing cracks of a membrane containing a metal carbide formed on the inner surface of a crucible.A manufacturing apparatus of a silicon carbide sing...
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JP6629886B2 |
Produced is a large single crystal with no crystal grain boundary, which is a high-quality single crystal that has a uniform composition in both the vertical and horizontal directions at an optimum dopant concentration and contains only ...
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JP6620411B2 |
This glass article production device 11 comprises a glass melting furnace containing a first melting furnace 12 and a second melting furnace 13, and a first flow path 14 for sending molten glass MG from a flow-out portion 12a of the firs...
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JP6617680B2 |
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JP2019534937A |
The present disclosure relates to crucibles, vapor deposition equipment and vapor deposition systems. The crucible includes a storage chamber for storing the material to be heated, the crucible further includes a collector located in the...
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JP2019202923A |
To provide a crystal growth apparatus introduced at a low cost, having durability and capable of substantially reducing growth cost by lengthening a growing crystal while maintaining a stable yield.The crystal growth apparatus comprises ...
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JP6610529B2 |
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JP6611000B2 |
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JP6607390B2 |
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JP6597526B2 |
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JP2019186132A |
To suppress exposure of a molten metal.An induction heating dissolution device 1 comprises: a crucible 11 in which an inner space 23 is formed by a side wall 21 and a bottom wall 22; a melting coil 12 for melting a melted material 101 pu...
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JP6578139B2 |
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JP2019152413A |
To provide a processed object input device capable of suppressing melt from scattering when inputting a processed object into the melt.A processed object input device 1 for inputting a processed object from the outside into a processing ...
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JP2019152414A |
To provide a processed object input device capable of suppressing melt from scattering when inputting a large processed object into the melt.A processed object input device 1 for inputting a processed object from the outside into a proce...
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JP2019147698A |
To provide an apparatus and method for growing a crystal, capable of reducing rapid change in growth rate caused by temperature fluctuation in an electric furnace especially in the growth of a straight body part during crystal growth to ...
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JP2019123645A |
To provide a graphite heater for manufacturing a single crystal, capable of uniformizing temperature distribution in the circumferential direction of the heater compared with a conventional heater and reducing the occurrence frequency of...
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JP2019090093A |
To recover impurity removal performance by dissolving and removing impurities that block a surface of an impurity capture part in a liquid metal purification apparatus.A liquid metal purification apparatus captures impurities by using te...
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JP3221223U |
To significantly improve production efficiency by not requiring coating of a special material having excellent corrosion resistance, and to maintain oxidation resistance equivalent to that of a normal graphite crucible, while suppressing...
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JP2019052067A |
To provide a single crystal growth apparatus that can keep axial symmetry of temperature distribution in a crucible and improve a life of a refractory box arranged around the crucible.A single crystal growth apparatus 10 for growing an o...
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JP6486856B2 |
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JP6473587B2 |
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JP6473455B2 |
A method of producing silicon carbide is disclosed. The method comprises the steps of providing a sublimation furnace comprising a furnace shell, at least one heating element positioned outside the furnace shell, and a hot zone positione...
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